Effect of Gate Length on the Electrical Characteristics of Nanoelectronic AlGaN/GaN High Electron Mobility Transistors to Fabricate the Biomedical Sensors in Nanoelectronics

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Biomedical Sensors ◽

Electrical Characteristics of the 0.1 µm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.7189 ◽

2003 ◽

Vol 42 (Part 1, No. 12) ◽

pp. 7189-7193 ◽

Cited By ~ 2

Author(s):

Woo-Suk Sul ◽

Sam-Dong Kim ◽

Hyung-Moo Park ◽

Jin-Koo Rhee

Keyword(s):

Dielectric Constant ◽

Electron Mobility ◽

Low Dielectric Constant ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Low Dielectric

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Dry etching bilayer and trilevel resist systems for submicron gate length GaAs based high electron mobility transistors for power and digital applications

10.1116/1.585949 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2949 ◽

Cited By ~ 9

Author(s):

F. Ren

Keyword(s):

Electron Mobility ◽

Dry Etching ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Numerical performance evaluation of AlGaN/GaN high electron mobility transistors including gate length effects

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2009.04.026 ◽

2009 ◽

Vol 41 (8) ◽

pp. 1517-1521 ◽

Cited By ~ 6

Author(s):

Z. Hashempour ◽

A. Asgari ◽

S. Nikipar ◽

M. Abolhasani ◽

M. Kalafi

Keyword(s):

Performance Evaluation ◽

Electron Mobility ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Numerical Performance ◽

Length Effects

Gate Length Scaling Effect on High-Electron Mobility Transistors Devices Using AlGaN/GaN and AlInN/AlN/GaN Heterostructures

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.8726 ◽

2014 ◽

Vol 14 (8) ◽

pp. 6243-6246 ◽

Cited By ~ 2

Author(s):

S. Y. Liao ◽

C. C. Lu ◽

T. Chang ◽

C. F. Huang ◽

C. H. Cheng ◽

...

Keyword(s):

Electron Mobility ◽

Gate Length ◽

High Electron ◽

Scaling Effect ◽

High Electron Mobility ◽

Length Scaling

A comparison on the Electrical Characteristics of SiO2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal–Oxide/Insulator–Semiconductor High-Electron Mobility-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.4911 ◽

2005 ◽

Vol 44 (7A) ◽

pp. 4911-4913 ◽

Cited By ~ 10

Author(s):

Krishnan Balachander ◽

Subramanium Arulkumaran ◽

Takashi Egawa ◽

Yoshiaki Sano ◽

Krishnan Baskar

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Gate Insulators ◽

Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

Thin Solid Films ◽

10.1016/j.tsf.2013.01.028 ◽

2013 ◽

Vol 544 ◽

pp. 526-529 ◽

Cited By ~ 7

Author(s):

Ray-Ming Lin ◽

Fu-Chuan Chu ◽

Atanu Das ◽

Sheng-Yu Liao ◽

Shu-Tsun Chou ◽

...

Keyword(s):

Rare Earth ◽

Electron Mobility ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electrical characteristics of high-power AlGaN-GaN high electron mobility transistors irradiated with protons and heavy ions

10.1117/12.2250250 ◽

2017 ◽

Author(s):

Yongkun Sin ◽

Jeremy Bonsall ◽

Zachary Lingley ◽

Miles Brodie ◽

Maribeth Mason

Keyword(s):

High Power ◽

Electron Mobility ◽

Heavy Ions ◽

High Electron ◽

High Electron Mobility ◽

High-Power-Density 0.25 µm Gate-Length AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating 6H–SiC Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.13 ◽

2006 ◽

Vol 45 (1A) ◽

pp. 13-17 ◽

Cited By ~ 17

Author(s):

J.-W. Lee ◽

V. Kumar ◽

I. Adesida

Keyword(s):

Power Density ◽

High Power ◽

Electron Mobility ◽

Gate Length ◽

High Electron ◽

High Power Density ◽

High Electron Mobility ◽

Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length

Journal of Applied Physics ◽

10.1063/1.353341 ◽

1993 ◽

Vol 73 (2) ◽

pp. 804-812 ◽

Cited By ~ 23

Author(s):

P. Dollfus ◽

C. Bru ◽

P. Hesto

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Mobility ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Physical Limitations

Microwave performance of 0.25-µm gate length high electron mobility transistors

IEEE Electron Device Letters ◽

10.1109/edl.1985.26074 ◽

1985 ◽

Vol 6 (3) ◽

pp. 142-145 ◽

Cited By ~ 33

Author(s):

U.K. Mishra ◽

S.C. Palmateer ◽

P.C. Chao ◽

P.M. Smith ◽

J.C.M. Hwang

Keyword(s):

Electron Mobility ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽