Transport properties of a two-dimensional electron gas closely separated from an underlying n+ GaAs layer: The fabrication of independent ohmic contacts using molecular beam epitaxial regrowth and in situ focused ion beams

1993 ◽  
Vol 11 (3) ◽  
pp. 982 ◽  
Author(s):  
E. H. Linfield
Keyword(s):  
Ohmic Contacts ◽  
Molecular Beam ◽  
Electron Gas ◽  
Gaas Layer ◽  
Focused Ion Beams ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Molecular Beam Epitaxial ◽  
Dimensional Electron Gas

Formation of Buried Two-Dimensional Electron Gas in Gaas by Si Ion Doping Using Mbe-Fib Combined System

1995 ◽  
Vol 396 ◽  
Author(s):  
J. YANAGISAWA ◽  
H. Nakayama ◽  
F. Wakaya ◽  
Y. Yuba ◽  
K. Gamo
Keyword(s):  
Molecular Beam ◽  
Electron Gas ◽  
Focused Ion Beams ◽  
Dimensional Electron ◽  
Combined System ◽  
Two Dimensional Electron Gas ◽  
Post Annealing ◽  
Ion Doping ◽  
Dimensional Electron Gas ◽  
Selective Formation

Abstract0.1 and 30 keV Si2+ focused ion beams (FIB) were implanted in two types of GaAs, one of which is semi-insulating (s.i.) GaAs, while the other is grown by molecular beam epitaxy (MBE). Successive regrowth over the implanted surface was performed using MBE-FIB combined system, and the resistance was measured. It was found that for 100 eV Si2+ FIB implantation, the sample was nonconductive without a post annealing at 800°C. After the post annealing, however, the sample became conductive, and the resistance was the same order in magnitude as the sample fabricated using 30 keV Si + FIB irradiation. This suggests a potential of selective formation of Si δ-like doped layers in GaAs and GaAs/AlGaAs using a low-energy FIB.

scholarly journals Field-effect-induced two-dimensional electron gas utilizing modulation-doped ohmic contacts

2014 ◽  
Vol 197 ◽  
pp. 20-24 ◽  
Author(s):  
Sumit Mondal ◽  
Geoffrey C. Gardner ◽  
John D. Watson ◽  
Saeed Fallahi ◽  
Amir Yacoby ◽  
...  
Keyword(s):  
Field Effect ◽  
Ohmic Contacts ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

Doping Study of Se into AlGaAs Layers Grown by MBE, and their Application to HEMT Structures

1988 ◽  
Vol 144 ◽  
Author(s):  
T. Maed ◽  
T. Ishikawa ◽  
K. Kondo
Keyword(s):  
Molecular Beam ◽  
Electron Gas ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Si Doping ◽  
Se Doping ◽  
Si Doped ◽  
Dx Center ◽  
Dimensional Electron Gas ◽  
Dopant Source

ABSTRACTWe studied doping Se into AlGaAs layers using PbSe as a dopant source for molecular beam epitaxy (MBE). Good controllability and abruptness equivalent to that of Si-doping were obtained. Se-doping was successfully applied to HEMT structures with reduced DX center concentrations. The two dimensional electron gas (2DEG) characteristics of these structures were comparable to those of Si-doped structures.

Superconductivity in AuNiGe Ohmic contacts to a GaAs-based high mobility two-dimensional electron gas

2020 ◽  
Vol 117 (16) ◽  
pp. 162104
Author(s):  
C. B. Beauchamp ◽  
S. Dimitriadis ◽  
J. T. Nicholls ◽  
L. V. Levitin ◽  
A. J. Casey ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Electron Gas ◽  
High Mobility ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas
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