Thin film properties of low-pressure chemical vapor deposition TiN barrier for ultra-large-scale integration applications

1993 ◽  
Vol 11 (4) ◽  
pp. 1287 ◽  
Author(s):  
Rama I. Hegde
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Film Properties ◽  
Pressure Chemical ◽  
Large Scale Integration ◽  
Scale Integration

Control of deposition profile of Cu for large-scale integration (LSI) interconnects by plasma chemical vapor deposition

2005 ◽  
Vol 77 (2) ◽  
pp. 391-398 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masaharu Shiratani ◽  
Manabu Takeshita ◽  
Makoto Kita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Ion Irradiation ◽  
Chemical Vapor ◽  
Ionic Species ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Large Scale Integration ◽  
Scale Integration

H-assisted plasma chemical vapor deposition (HAPCVD) realizes control of deposition profile of Cu in trenches. The key to the control is ion irradiation to surfaces. With increasing the flux and energy of ions, the profile changes from conformal to subconformal and then to an anisotropic one, for which Cu material is filled from the bottom of the trench without deposition on the sidewall. H3+ and ArH+ are identified as the major ionic species which contribute to the control, and hence the deposition profile also depends on a ratio R = H2/(Ar + H2).

Germanium Thin Film Formation by Low‐Pressure Chemical Vapor Deposition

1997 ◽  
Vol 144 (4) ◽  
pp. 1423-1429 ◽  
Author(s):  
Zhiguo Meng ◽  
Zhonghe Jin ◽  
Bhat A. Gururaj ◽  
Paul Chu ◽  
Hoi S. Kwok ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Formation ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Thin Film Formation

scholarly journals Piezo-Hall effect in single crystal p-type 3C–SiC(100) thin film grown by low pressure chemical vapor deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (37) ◽  
pp. 31191-31195 ◽  
Author(s):  
Afzaal Qamar ◽  
H.-P. Phan ◽  
Toan Dinh ◽  
Li Wang ◽  
Sima Dimitrijev ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Hall Effect ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
First Results ◽  
Pressure Chemical ◽  
P Type

This article reports the first results on piezo-Hall effect in single crystal p-type 3C–SiC(100) Hall devices.

Synthesis of Cs2SnI6 perovskite thin film by low-pressure chemical vapor deposition method

2021 ◽  
pp. 138799
Author(s):  
Phung Dinh Hoat ◽  
Hwi-Hon Ha ◽  
Pham Tien Hung ◽  
Vu Xuan Hien ◽  
Sangwook Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Pressure Chemical

scholarly journals Silicon Nitride Films Deposited by Atmospheric Pressure Chemical Vapor Deposition

1997 ◽  
Vol 495 ◽  
Author(s):  
Xian Lin ◽  
Denis Endisch ◽  
Xiaomeng Chen ◽  
Alain Kaloyeros
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Large Scale ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Scale Integration

ABSTRACTFilms of silicon nitride are widely used in semiconductor technologies for very large scale integration (VLSI), thin film transistor (TFT), and solar cell applications. Current production technologies for silicon nitride use low pressure chemical vapor deposition (LPCVD) at temperatures > 700 °C or plasma enhanced chemical vapor deposition (PECVD) at temperatures below 450 °C. In this report, successful deposition of silicon nitride films by the low temperature thermal atmospheric pressure chemical vapor deposition (APCVD) method is described. Using a novel precursor tetraiodosilane (SiI4), deposition of silicon nitride has been achieved at temperature as low as 400 °C. Data pertaining to the dependence of film properties on deposition temperature are presented, along with a evaluation of the deposition rate, composition, chemical structure, and conformality of the resulting films.

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