scholarly journals Piezo-Hall effect in single crystal p-type 3C–SiC(100) thin film grown by low pressure chemical vapor deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (37) ◽  
pp. 31191-31195 ◽  
Author(s):  
Afzaal Qamar ◽  
H.-P. Phan ◽  
Toan Dinh ◽  
Li Wang ◽  
Sima Dimitrijev ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Hall Effect ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
First Results ◽  
Pressure Chemical ◽  
P Type

This article reports the first results on piezo-Hall effect in single crystal p-type 3C–SiC(100) Hall devices.

New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization

2010 ◽  
Vol 442 ◽  
pp. 195-201
Author(s):  
F. Iqbal ◽  
A. Ali ◽  
A. Mehmood ◽  
M. Yasin ◽  
A. Raja ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Single Crystalline ◽  
Type Silicon ◽  
Vapor Deposition Technique ◽  
Pressure Chemical ◽  
P Type

We report the growth of SiC layers on low cost p-type silicon (100 and/or 111) substrates maintained at constant temperature (1050 - 1350oC, ∆T=50oC) in a low pressure chemical vapor deposition reactor. Typical Fourier transform infrared spectrum showed a dominant peak at 800 cm-1 due to Si-C bond excitation. Large area x-ray diffraction spectra revealed single crystalline cubic structures of 3C-SiC(111) and 3C-SiC(200) on Si(111) and Si(100) substrates, respectively. Cross-sectional views exposed by scanning electron microscopy display upto 104 µm thick SiC layer. Energy dispersive spectroscopy of the layers demonstrated stiochiometric growth of SiC. Surface roughness and morphology of the films were also checked with the help of atomic force microscopy. Resistivity of the as-grown layers increases with increasing substrate temperature due to decrease of isolated intrinsic defects such as silicon and/or carbon vacanies having activation energy 0.59 ±0.02 eV.

Performance of thin-film transistors on polysilicon films grown by low-pressure chemical vapor deposition at various pressures

1992 ◽  
Vol 39 (3) ◽  
pp. 598-606 ◽  
Author(s):  
C.A. Dimitriadis ◽  
P.A. Coxon ◽  
L. Dozsa ◽  
L. Papadimitriou ◽  
N. Economou
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Polysilicon Films

ChemInform Abstract: Low Pressure Chemical Vapor Deposition of Thin Film GeO2-SiO2 Glasses.

ChemInform ◽  
1990 ◽  
Vol 21 (25) ◽  
Author(s):  
S. RASTANI ◽  
A. REISMAN
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Germanium Thin Film Formation by Low‐Pressure Chemical Vapor Deposition

1997 ◽  
Vol 144 (4) ◽  
pp. 1423-1429 ◽  
Author(s):  
Zhiguo Meng ◽  
Zhonghe Jin ◽  
Bhat A. Gururaj ◽  
Paul Chu ◽  
Hoi S. Kwok ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Formation ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Thin Film Formation

Fast Growth of Continuous Single-Crystal Graphene Film on Copper by Low-Pressure Chemical Vapor Deposition

2020 ◽  
Vol 49 (8) ◽  
pp. 5064-5069
Author(s):  
Haifen Xie ◽  
Jinming Zhang ◽  
Haichuan Mu
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Fast Growth ◽  
Pressure Chemical

Cu hill and graphene grain evolution in the synthesis of millimeter-sized single crystal graphene during low pressure chemical vapor deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (62) ◽  
pp. 32941-32945 ◽  
Author(s):  
Shuya Zhu ◽  
Quanfu Li ◽  
Qian Chen ◽  
Weihua Liu ◽  
Xin Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

The evolution of Cu hills beneath graphene grains during the growth of millimeter scale single crystal graphene using low pressure chemical vapor deposition (LPCVD) was investigated.

Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor Deposition

2013 ◽  
Vol 25 (14) ◽  
pp. 2062-2065 ◽  
Author(s):  
Shanshan Chen ◽  
Hengxing Ji ◽  
Harry Chou ◽  
Qiongyu Li ◽  
Hongyang Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Evaporative Loss

Synthesis of Cs2SnI6 perovskite thin film by low-pressure chemical vapor deposition method

2021 ◽  
pp. 138799
Author(s):  
Phung Dinh Hoat ◽  
Hwi-Hon Ha ◽  
Pham Tien Hung ◽  
Vu Xuan Hien ◽  
Sangwook Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Pressure Chemical

Role of limited hydrogen and flow interval on the growth of single crystal to continuous graphene by low-pressure chemical vapor deposition

2017 ◽  
Vol 28 (7) ◽  
pp. 075602 ◽  
Author(s):  
Munu Borah ◽  
Abhishek K Pathak ◽  
Dilip K Singh ◽  
Prabir Pal ◽  
Sanjay R Dhakate
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical
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