Scanning tunneling microscopy of Cl2-gas etched GaAs (001) surfaces using an ultrahigh vacuum sample transfer system

1994 ◽  
Vol 12 (5) ◽  
pp. 2894 ◽  
Author(s):  
Fukunobu Osaka
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Scanning Tunneling ◽  
Transfer System ◽  
Tunneling Microscopy ◽  
Sample Transfer

An ultrahigh vacuum tip transfer system for the scanning tunneling microscopy/field ion microscopy

1990 ◽  
Vol 61 (1) ◽  
pp. 81-85 ◽  
Author(s):  
Kazuyoshi Sugihara ◽  
Akira Sakai ◽  
Yoshiaki Akama ◽  
Naohiro Shoda ◽  
Yoshihide Kato ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Scanning Tunneling ◽  
Transfer System ◽  
Tunneling Microscopy ◽  
Field Ion Microscopy ◽  
Ion Microscopy

scholarly journals Layer-by-Layer Pyramid Formation from Low-Energy Ar+ Bombardment and Annealing of Ge (110)

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2521
Author(s):  
Marshall van Zijll ◽  
Samantha S. Spangler ◽  
Andrew R. Kim ◽  
Hazel R. Betz ◽  
Shirley Chiang
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Surface Damage ◽  
Low Energy ◽  
Scanning Tunneling ◽  
Layer By Layer ◽  
Sample Holder ◽  
Tunneling Microscopy ◽  
Ion Energies ◽  
20 Nm

Isolated pyramids, 30–80 nm wide and 3–20 nm tall, form during sputter-annealing cycles on the Ge (110) surface. Pyramids have four walls with {19 13 1} faceting and a steep mound at the apex. We used scanning tunneling microscopy (STM) under ultrahigh vacuum conditions to periodically image the surface at ion energies between 100 eV and 500 eV and incremental total flux. Pyramids are seen using Ar+ between 200 eV and 400 eV, and require Ag to be present on the sample or sample holder. We suspect that the pyramids are initiated by Ag co-sputtered onto the surface. Growth of pyramids is due to the gathering of step edges with (16 × 2) reconstruction around the pyramid base during layer-by-layer removal of the substrate, and conversion to {19 13 1} faceting. The absence of pyramids using Ar+ energies above 400 eV is likely due to surface damage that is insufficiently annealed.

Observation of Nanosized Cap Structures on 6H–SiC(000\bar1) Substrates by Ultrahigh-Vacuum Scanning Tunneling Microscopy

2006 ◽  
Vol 45 (1A) ◽  
pp. 372-374 ◽  
Author(s):  
Hyungjin Bang ◽  
Yuka Ito ◽  
Yasuyuki Kawamura ◽  
Etsuko Hosoda ◽  
Chisa Yoshida ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

A two-dimensional ultrahigh vacuum positioner for scanning tunneling microscopy

1998 ◽  
Vol 69 (3) ◽  
pp. 1403-1405 ◽  
Author(s):  
K. Pond ◽  
B. Z. Nosho ◽  
H. R. Stuber ◽  
A. C. Gossard ◽  
W. H. Weinberg
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Tunneling Microscopy
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