Fabrication of back-gated complementary metal-oxide semiconductor devices using mixed and matched optical and x-ray lithographies

Oxide Semiconductor ◽

X Ray

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Application of synchrotron x-ray lithography to fabricate fully scaled 0.5 μm complementary metal–oxide semiconductor devices and circuits

10.1116/1.584477 ◽

1989 ◽

Vol 7 (6) ◽

pp. 1662 ◽

Cited By ~ 6

Author(s):

L. K. Wang

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

X Ray

Challenges to quantitative energy-dispersive X-ray spectrometry and its application to graded embedded silicon–germanium for high-performance complementary metal oxide semiconductor devices

Thin Solid Films ◽

10.1016/j.tsf.2010.07.104 ◽

2010 ◽

Vol 519 (1) ◽

pp. 203-209 ◽

Cited By ~ 5

Author(s):

R. Hübner ◽

H.-J. Engelmann ◽

E. Zschech

Keyword(s):

Metal Oxide ◽

Silicon Germanium ◽

High Performance ◽

Semiconductor Devices ◽

Energy Dispersive ◽

Oxide Semiconductor ◽

X Ray

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Stress Engineering

Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

High Permittivity

Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Cited By ~ 2

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Dry Etching ◽

Oxide Semiconductor ◽

Gate Stack

WE-G-204-04: Focal Spot Deblurring For High Resolution Amorphous Selenium (aSe) Complementary Metal Oxide Semiconductor (CMOS) X-Ray Detector

Medical Physics ◽

10.1118/1.4926088 ◽

2015 ◽

Vol 42 (6Part40) ◽

pp. 3694-3694

Author(s):

S Setlur Nagesh ◽

R Rana ◽

M Russ ◽

C Ionita ◽

D Bednarek ◽

...

Keyword(s):

High Resolution ◽

Metal Oxide ◽

Focal Spot ◽

Amorphous Selenium ◽

Oxide Semiconductor ◽

X Ray

Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6843 ◽

2000 ◽

Vol 39 (Part 1, No. 12B) ◽

pp. 6843-6848 ◽

Cited By ~ 3

Author(s):

Mitsuru Narihiro ◽

Hitoshi Wakabayashi ◽

Makoto Ueki ◽

Kohichi Arai ◽

Takashi Ogura ◽

...

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Lithography Process ◽

Beam System ◽

Mix And Match

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

Etching of TiN-based gates for advanced complementary metal-oxide-semiconductor devices

10.1116/1.2953732 ◽

2008 ◽

Vol 26 (4) ◽

pp. 1440 ◽

Cited By ~ 2

Author(s):

V. Bliznetsov ◽

N. Singh ◽

R. Kumar ◽

N. Balasubramanian ◽

P. Guo ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor

Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.4913832 ◽

2015 ◽

Vol 117 (11) ◽

pp. 112806 ◽

Cited By ~ 57

Author(s):

J. Robertson ◽

Y. Guo ◽

L. Lin

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Defect State ◽

Oxide Interfaces ◽

At Iii

Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.4816090 ◽

2013 ◽

Vol 114 (3) ◽

pp. 034505 ◽

Cited By ~ 12

Author(s):

R. K. Pandey ◽

Rajesh Sathiyanarayanan ◽

Unoh Kwon ◽

Vijay Narayanan ◽

K. V. R. M. Murali

Keyword(s):

Metal Oxide ◽

Work Function ◽

Point Defects ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Effective Work ◽

Effective Work Function