Molecular-beam epitaxy of high quality lattice matched In1−x−yGaxAlyAs epitaxial layers on InP substrates

1996 ◽  
Vol 14 (3) ◽  
pp. 1719 ◽  
Author(s):  
S. J. Chua
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
High Quality ◽  
Inp Substrates ◽  
Lattice Matched

scholarly journals Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy

2000 ◽  
Vol 76 (24) ◽  
pp. 3549-3551 ◽  
Author(s):  
T. Makino ◽  
C. H. Chia ◽  
N. T. Tuan ◽  
Y. Segawa ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Laser Molecular Beam Epitaxy ◽  
Lattice Matched

Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs

2013 ◽  
Vol 1561 ◽  
Author(s):  
Cheng-Ying Huang ◽  
Jeremy J. M. Law ◽  
Hong Lu ◽  
Mark J. W. Rodwell ◽  
Arthur C. Gossard
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Barrier Material ◽  
Double Heterostructures ◽  
Thin Channel ◽  
Si Doped ◽  
Lattice Matched

ABSTRACTWe investigated AlAs0.56Sb0.44 epitaxial layers lattice-matched to InP grown by molecular beam epitaxy (MBE). Silicon (Si) and tellurium (Te) were studied as n-type dopants in AlAs0.56Sb0.44 material. Similar to most Sb-based materials, AlAs0.56Sb0.44 demonstrates a maximum active carrier concentration around low-1018 cm-3 when using Te as a dopant. We propose the use of a heavily Si-doped InAlAs layer embedded in the AlAsSb barrier as a modulation-doped layer. The In0.53Ga0.47As/AlAs0.56Sb0.44 double heterostructures with a 10 nm InGaAs well show an electron mobility of about 9400 cm2/V・s at 295 K and 32000 cm2/V・s at 46 K. A thinner 5 nm InGaAs well has an electron mobility of about 4300 cm2/V・s at 295 K. This study demonstrates that AlAs0.56Sb0.44 is a promising barrier material for highly scaled InGaAs MOSFETs and HEMTs.

High quality CuInSe2 films grown on pseudo‐lattice‐matched substrates by molecular beam epitaxy

1996 ◽  
Vol 69 (5) ◽  
pp. 647-649 ◽  
Author(s):  
S. Niki ◽  
P. J. Fons ◽  
A. Yamada ◽  
T. Kurafuji ◽  
S. Chichibu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Lattice Matched

MBE GROWTH OF NON-LATTICE MATCHED (BaCa)F2, (Pb,Sn)Se/(Ba,Ca)F 2 AND CdTe/(Ba,Ca)F2 ON Si SUBSTRATES

1985 ◽  
Vol 56 ◽  
Author(s):  
H. ZOGG ◽  
P. MAIER ◽  
P. NORTON
Keyword(s):  
Molecular Beam Epitaxy ◽  
Mechanical Stress ◽  
Lattice Constant ◽  
Molecular Beam ◽  
Rutherford Backscattering ◽  
Epitaxial Layers ◽  
Mbe Growth ◽  
Electron Channeling ◽  
Si Substrates ◽  
Lattice Matched

AbstractGraded (Ca,Ba)F2 layers consisting of near lattice matched CaF2 at the Si interface and of BaF2 with 14% increased lattice constant at the top surface were grown by molecular beam epitaxy (MBE) on Si(111). Smooth and crackfree layers exhibiting Rutherford backscattering (RBS) channeling minima below 5% were obtained. Device quality epitaxial layers of PbTe, PbSe and (Pb,Sn)Se were grown on top of these structures. Mechanical stress at 300K was relaxed by athermal mechanisms in the fluoride- as well as in the Pb-salt films. - In preliminary runs, epitaxial CdTe-layers were obtained on Si(111) using the same fluoride-buffer film technique and which showed clear SEM electron channeling patterns.

Preparation of (AlxGa1−x)yIn1−yAs (0≤x≤0.5,y=0.47) lattice matched to InP substrates by molecular beam epitaxy

1982 ◽  
Vol 53 (11) ◽  
pp. 7558-7560 ◽  
Author(s):  
Kazuya Masu ◽  
Tomoyoshi Mishima ◽  
Shin‐ichiro Hiroi ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inp Substrates ◽  
Lattice Matched
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