Molecular beam epitaxy growth of In[sub y2]Al[sub 1−y2]As/In[sub 0.73]Ga[sub 0.27]As/In[sub y1]Al[sub 1−y1]As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

1997 ◽  
Vol 15 (6) ◽  
pp. 2021 ◽  
Author(s):  
C. Jiang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

2012 ◽  
Vol 111 (9) ◽  
pp. 093520 ◽  
Author(s):  
W. Wang ◽  
K. K. Leung ◽  
W. K. Fong ◽  
S. F. Wang ◽  
Y. Y. Hui ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Van Der Waals ◽  
Molecular Beam Epitaxy Growth ◽  
High Quality

Molecular beam epitaxy growth of PbSe on Si (211) using a ZnTe buffer layer

2011 ◽  
Vol 29 (5) ◽  
pp. 051503 ◽  
Author(s):  
X. J. Wang ◽  
Y. Chang ◽  
Y. B. Hou ◽  
C. R. Becker ◽  
R. Kodama ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

Influence of AlN buffer layer on molecular beam epitaxy growth of wurtzite Al1−xScxN thin films

2020 ◽  
Vol 43 (1) ◽  
Author(s):  
Shashidhara Acharya ◽  
Abhijit Chatterjee ◽  
Seema ◽  
Mukul Gupta ◽  
Bivas Saha
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Aln Buffer

scholarly journals Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer

2021 ◽  
Vol 549 ◽  
pp. 149245
Author(s):  
Chaomin Zhang ◽  
Kirstin Alberi ◽  
Christiana Honsberg ◽  
Kwangwook Park
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Surface Treatments ◽  
Gaas Surface

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

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