GaAs/AlGaAs heterojunction bipolar transistors with a base doping 10[sup 20] cm[sup −3] grown by solid-source molecular beam epitaxy using CBr[sub 4]

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590224 ◽

1998 ◽

Vol 16 (3) ◽

pp. 972 ◽

Author(s):

M. Micovic

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

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Molecular Beam Epitaxy of Ga0.99Be0.01As for very high Speed Heterojunction Bipolar Transistors

Properties of Impurity States in Superlattice Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5553-3_3 ◽

1988 ◽

pp. 19-28 ◽

Author(s):

J. L. Liévin ◽

F. Alexandre ◽

C. Dubon-Chevallier

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

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Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1866 ◽

1997 ◽

Vol 36 (Part 1, No. 3B) ◽

pp. 1866-1868 ◽

Author(s):

Kiyoshi Ouchi ◽

Tomoyoshi Mishima ◽

Kazuhiro Mochizuki ◽

Tohru Oka ◽

Tomonori Tanoue

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Carbon Doped ◽

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Electrical Characterization of SiGe Heterojunction Bipolar Transistors (HBTs) Formed by Molecular Beam Epitaxy (MBE)

Condensed Systems of Low Dimensionality - NATO ASI Series ◽

10.1007/978-1-4684-1348-9_51 ◽

1991 ◽

pp. 669-674

Author(s):

D. J. Godfrey

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Electrical Characterization ◽

Bipolar Transistors

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High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2190678 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1564 ◽

Author(s):

Bing-Ruey Wu ◽

Benjamin F. Chu-Kung ◽

Milton Feng ◽

K. Y. Cheng

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

High Performance ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235671 ◽

2003 ◽

Author(s):

H.-H. Lin ◽

C.-H. Huang

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

High Gain ◽

Bipolar Transistors

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Characteristics of pnp InGaAlAs/InGaAs heterojunction bipolar transistors grown by molecular beam epitaxy

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235673 ◽

2003 ◽

Author(s):

A. Dodabalapur ◽

T.Y. Chang

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors

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InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588905 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2225 ◽

Author(s):

T. P. Chin

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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Asymmetric characteristics of InGaP/GaAs double-heterojunction bipolar transistors grown by solid source molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/7/3/026 ◽

1992 ◽

Vol 7 (3) ◽

pp. 425-428 ◽

Author(s):

T W Lee ◽

P A Houston ◽

R Kumar ◽

G Hill ◽

M Hopkinson

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1306657 ◽

2000 ◽

Vol 77 (6) ◽

pp. 869-871 ◽

Author(s):

H. Q. Zheng ◽

K. Radhakrishnan ◽

H. Wang ◽

K. H. Yuan ◽

S. F. Yoon ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy

IEEE Electron Device Letters ◽

10.1109/led.2007.910000 ◽

2007 ◽

Vol 28 (12) ◽

pp. 1083-1085 ◽

Author(s):

K. L. Lew ◽

S. F. Yoon ◽

H. Wang ◽

S. Wicaksono ◽

J. A. Gupta ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

High Gain ◽

Bipolar Transistors ◽

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