High-speed hybrid plasmonic electro-optical absorption modulator exploiting epsilon-near-zero effect in indium-tin-oxide

2018 ◽  
Vol 12 (03) ◽  
pp. 1 ◽  
Author(s):  
Mohamed Y. Abdelatty
Keyword(s):  
Optical Absorption ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
Zero Effect ◽  
Epsilon Near Zero

Design, fabrication, and modeling of high-speed metal-semiconductor-metal (MSM) photodetectors with indium-tin-oxide (ITO) and Ti/Pt/Au contacts

1995 ◽  
Author(s):  
Christian Beaulieu ◽  
Francois L. Gouin ◽  
Julian P. Noad ◽  
William Hartman ◽  
Ewa Lisicka-Skrzek ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors

Laser direct imaging of transparent indium tin oxide electrodes using high speed stitching techniques

2014 ◽  
Vol 21 (5) ◽  
pp. 732-735 ◽  
Author(s):  
Pi-Ying Cheng ◽  
Wen-Tse Hsiao ◽  
Chien-Kai Chung ◽  
Shih-Feng Tseng ◽  
Ien-Chang Liao
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
Direct Imaging ◽  
Oxide Electrodes ◽  
Stitching Techniques

scholarly journals High-speed visible-blind GaN-based indium–tin–oxide Schottky photodiodes

2001 ◽  
Vol 79 (17) ◽  
pp. 2838-2840 ◽  
Author(s):  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Ekmel Ozbay
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
Visible Blind

Time-Resolved Nonlinear Refraction of Indium Tin Oxide at Epsilon Near Zero

2017 ◽  
Author(s):  
Sepehr Benis ◽  
Peng Zhao ◽  
Himansu S. Pattanaik ◽  
David J. Hagan ◽  
Eric W. Van Stryland
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Nonlinear Refraction ◽  
Time Resolved ◽  
Epsilon Near Zero

High-Speed Etching of Indium-Tin-Oxide Thin Films Using an Inductively Coupled Plasma

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4438-4441 ◽  
Author(s):  
Keiji Nakamura ◽  
Tomonori Imura ◽  
Hideo Sugai ◽  
Michiko Ohkubo ◽  
Katsutaro Ichihara
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Inductively Coupled Plasma ◽  
High Speed ◽  
Oxide Thin Films ◽  
Inductively Coupled

scholarly journals Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 922 ◽  
Author(s):  
Jiqing Lian ◽  
Dawei Zhang ◽  
Ruijin Hong ◽  
Peizhen Qiu ◽  
Taiguo Lv ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Plasma Oscillation ◽  
Field Enhancement ◽  
Fdtd Simulation ◽  
Structural Defects ◽  
Defect States ◽  
Vacancy Defects ◽  
Epsilon Near Zero

Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O2) was reported. Red-shift of λENZ (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulation of permittivity is dominated by the transformation of plasma oscillation frequency and carrier concentration depending on Drude model, which was produced by the formation of structural defects and the reduction of oxygen vacancy defects during annealing. The evolution of defects can be inferred by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The optical bandgaps (Eg) were investigated to explain the existence of defect states. And the formation of structure defects and the electric field enhancement were further verified by finite-difference time domain (FDTD) simulation.

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