10 x 10 cm2 aperture x-ray preionized discharge-pumped KrF excimer laser

1990 ◽  
Author(s):  
Hakaru Mizoguchi ◽  
Akira Endo ◽  
Jayden N. Jethwa ◽  
Fritz P. Schaefer
1993 ◽  
Vol 63 (22) ◽  
pp. 3046-3048 ◽  
Author(s):  
I. C. E. Turcu ◽  
I. N. Ross ◽  
G. J. Tallents

1991 ◽  
Vol 236 ◽  
Author(s):  
Gary A. Smith ◽  
Li-Chyong Chen ◽  
Mei-Chen Chuang

AbstractSystematic experiments have been carried out to characterize the yttria containing zirconia thin films on sapphire substrates by 248nm KrF excimer laser ablation. The deposition rate as a function of laser fluence and O2 pressure at room temperature was measured with a quartz crystal microbalance. The results show different threshold fluences for deposition in vacuum vs. oxygen. While the deposition rate increases with increasing fluence at a given oxygen pressure, the rate eventually saturates at a higher laser fluence. At a given fluence, the oxygen pressure dependence of the deposition rate shows a radical reduction when the O2 pressure increases from 10 mTorr to 1 Torr. Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy were used to obtain stoichiometric information. A very strong pressure dependence of the O/Zr ratio was observed. While the trend of increasing O/Zr and Zr/Y ratio with increasing O2 pressure is apparent, the correlations between O/Zr as well as Zr/Y ratio and other processing conditions are less obvious. RBS results indicate an increasing roughness at the interface between the ZrO2 film and the sapphire substrate as the oxygen pressure exceeds 50 mTorr. The structural information obtained from x-ray diffraction patterns indicates broadening of peak width with increasing laser fluence as well as decreasing substrate temperature. For the film deposited at a lower substrate temperature, a strong (002) texture was observed.


1991 ◽  
Vol 235 ◽  
Author(s):  
Gary A. Smith ◽  
Li-Chyong Chen ◽  
Mei-Chen Chuang

ABSTRACTSystematic experiments have been carried out to characterize the yttria containing zirconia thin films on sapphire substrates by 248nm KrF excimer laser ablation. The deposition rate as a function of laser fluence and O2 pressure at room temperature was measured with a quartz crystal microbalance. The results show different threshold fluences for deposition in vacuum vs. oxygen. While the deposition rate increases with increasing fluence at a given oxygen pressure, the rate eventually saturates at a higher laser fluence. At a given fluence, the oxygen pressure dependence of the deposition rate shows a radical reduction when the O2 pressure increases from 10 mTorr to 1 Torr. Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy were used to obtain stoichiometric information. A very strong pressure dependence of the O/Zr ratio was observed. While the trend of increasing O/Zr and Zr/Y ratio with increasing O2 pressure is apparent, the correlations between O/Zr as well as Zr/Y ratio and other processing conditions are less obvious. RBS results indicate an increasing roughness at the interface between the ZrO2 film and the sapphire substrate as the oxygen pressure exceeds 50 mTorr. The structural information obtained from x-ray diffraction patterns indicates broadening of peak width with increasing laser fluence as well as decreasing substrate temperature. For the film deposited at a lower substrate temperature, a strong (002) texture was observed.


1998 ◽  
Vol 526 ◽  
Author(s):  
Z.M. Ren ◽  
Y.F. Lu ◽  
W.D. Song ◽  
D.S.H. Chan ◽  
T.S. Low ◽  
...  

AbstractCarbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in nitrogen atmosphere. Different fluences of the excimer laser and pressures of the nitrogen atmosphere were used in order to achieve a high nitrogen content in the deposited thin films. Fourier Transform Infra-red (FTIR) and X-ray photoelectron spectroscopy (XPS) were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The highest N/C ratio 0.42 was achieved at an excimer laser fluence of 0.8 Jcm -2with a repetition rate of 10 Hz under the nitrogen pressure of PN=100 mTorr. A high content of C=N double bond instead of C-N triple bond was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductor-like characteristics with the optical band gap Eop, as high as 0.42 eV.


2001 ◽  
Vol 90 (12) ◽  
pp. 5851-5855 ◽  
Author(s):  
Toshimitsu Akane ◽  
Koji Sugioka ◽  
Katsumi Midorikawa ◽  
Jan J. Dubowski ◽  
Naoko Aoki ◽  
...  

2008 ◽  
Vol 15 (05) ◽  
pp. 675-679 ◽  
Author(s):  
H. X. QIAN ◽  
WEI ZHOU ◽  
H. Y. ZHENG

Surface oxidation of Ti was carried out using KrF excimer laser in the presence of O 2. Different colors were obtained by varying the number of laser pulses at the fixed laser fluence. X-ray photoelectron spectroscopy shows that the outmost surface is composed of TiO 2 and the inner layer consists of TiO and Ti 2 O 3 as well as TiO 2. Fractions of titanium chemical states stabilized at 33% TiO , 63% TiO 2, and 2% Ti 2 O 3 with increasing number of laser pulses. The surface roughness tends to increase with number of laser pulses. It is suggested that compositional variation and morphological difference contribute to the laser-induced surface coloration.


2008 ◽  
Vol 587-588 ◽  
pp. 42-46 ◽  
Author(s):  
M. Sivakumar ◽  
Vitor Oliveira ◽  
Rui Vilar ◽  
A.M. Botelho do Rego

Laser treatment is a promising technique for dental applications such as caries prevention, dental hypersensitivity reduction and improvement of bond strength of restoration materials. In this study the morphological, structural and chemical changes of enamel surface due to treatment with KrF excimer laser radiation were evaluated using scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. For radiation fluences near 1 J/cm², laser processing originates a relatively porous surface due to preferential removal of material in the enamel prism sheaths. Increasing the fluence leads to a relatively flat surface with clear evidence of surface melting. The X-ray diffractograms of both treated and untreated enamel are similar and correspond to hydroxyapatite. The only modification due to the laser treatment is a slight shift of the peaks, probably, due to a loss of the structural water of hydroxyapatite. X-ray photoelectron spectroscopy confirmed that organic matter is removed from the irradiated surface but no significant changes in the mineral phase occur.


2005 ◽  
Vol 22 (6) ◽  
pp. 1526-1529 ◽  
Author(s):  
Zhu Xiao-Li ◽  
Liu Shi-Bing ◽  
Chen Tao ◽  
Jiang Yi-Jian ◽  
Zuo Tie-Chuan

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