Efficient keV x‐ray emission from plasmas generated with 4 ps KrF excimer laser pulses

1993 ◽  
Vol 63 (22) ◽  
pp. 3046-3048 ◽  
Author(s):  
I. C. E. Turcu ◽  
I. N. Ross ◽  
G. J. Tallents
Keyword(s):  
Excimer Laser ◽  
Laser Pulses ◽  
X Ray ◽  
Krf Excimer Laser

STUDY OF COLORATION ON EXCIMER LASER TREATED TITANIUM SURFACES

2008 ◽  
Vol 15 (05) ◽  
pp. 675-679 ◽  
Author(s):  
H. X. QIAN ◽  
WEI ZHOU ◽  
H. Y. ZHENG
Keyword(s):  
Excimer Laser ◽  
Photoelectron Spectroscopy ◽  
Morphological Difference ◽  
Surface Oxidation ◽  
Laser Pulses ◽  
Compositional Variation ◽  
X Ray ◽  
Chemical States ◽  
Titanium Surfaces ◽  
Krf Excimer Laser

Surface oxidation of Ti was carried out using KrF excimer laser in the presence of O 2. Different colors were obtained by varying the number of laser pulses at the fixed laser fluence. X-ray photoelectron spectroscopy shows that the outmost surface is composed of TiO 2 and the inner layer consists of TiO and Ti 2 O 3 as well as TiO 2. Fractions of titanium chemical states stabilized at 33% TiO , 63% TiO 2, and 2% Ti 2 O 3 with increasing number of laser pulses. The surface roughness tends to increase with number of laser pulses. It is suggested that compositional variation and morphological difference contribute to the laser-induced surface coloration.

Surface hardening of SUS304 by irradiation with a KrF excimer laser in SiH4 gas ambient

1990 ◽  
Vol 5 (2) ◽  
pp. 265-270 ◽  
Author(s):  
Koji Sugioka ◽  
Hideo Tashiro ◽  
Koichi Toyoda ◽  
Eiichi Tamura ◽  
Keigo Nagasaka
Keyword(s):  
Excimer Laser ◽  
Surface Hardening ◽  
Continuous Distribution ◽  
Surface Hardness ◽  
Laser Pulses ◽  
High Concentration ◽  
Laser Fluences ◽  
High Adhesion ◽  
Krf Excimer Laser ◽  
Si Films

Surface hardening of SUS304 resulting from the process of doping and deposition of Si by irradiation of a KrF excimer laser beam in a SiH4 gas ambient is investigated, and variations of the surface hardness are examined for different numbers of laser pulses and the laser fluences. The hardening is due to Si incorporation in high concentration. The continuous distribution of Si atoms across the surface layer suggests that a very high adhesion strength of the deposited Si films can be formed. The specific process for surface modification is referred to as laser implant-deposition (LID).

10 x 10 cm2 aperture x-ray preionized discharge-pumped KrF excimer laser

1990 ◽  
Author(s):  
Hakaru Mizoguchi ◽  
Akira Endo ◽  
Jayden N. Jethwa ◽  
Fritz P. Schaefer
Keyword(s):  
Excimer Laser ◽  
X Ray ◽  
Krf Excimer Laser

Etch Performance of KRF Excimer Laser Micromachining Characterization on Silicon Material

2015 ◽  
Vol 780 ◽  
pp. 29-32 ◽  
Author(s):  
M.Z. Zainol ◽  
Yufridin Wahab ◽  
H. Fazmir ◽  
A.F.M. Anuar ◽  
S. Johari ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Etch Rate ◽  
Three Dimensional ◽  
Laser Pulses ◽  
Laser Micromachining ◽  
Rate Change ◽  
Performance Parameters ◽  
Laser Parameters ◽  
Characterization Study ◽  
Krf Excimer Laser

Excimer laser micromachining enables us to overcome the conventional lithography-based microfabrication limitations and simplify the process of creating three dimensional (3D) microstructures.The objective of this study is to investigate the relation between the number of laser pulses, number of laser passes through the channel of ablation site and their etch performance. Parameters such as frequency, fluence and velocity were retained as constants. In this paper, we present a parametric characterization study on silicon using KrF excimer laser micromachining. From the result, the etch rate change were recorded as the two major laser parameters (Number of laser pulses and number of laser passes) were varied. Both parameters were showing declination profile however from comparing both graphs, it showed that etch rate dropped more steeply when varied number of laser passes rather than number of pulses.

Poly-Resistor Thin Film Formation by Excimer Laser Micromachine

2015 ◽  
Vol 780 ◽  
pp. 17-21
Author(s):  
A.F.M. Anuar ◽  
Yufridin Wahab ◽  
M.Z. Zainol ◽  
H. Fazmir ◽  
M. Najmi ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Laser Energy ◽  
Film Formation ◽  
Chemical Vapor ◽  
Laser Pulses ◽  
Beam Size ◽  
Silicon Thin Film ◽  
Pressure Chemical ◽  
Krf Excimer Laser

A simple theoretical model and resistor fabrication for calculating the resistance of a polycrystalline silicon thin film is presented. The resistance value for poly-resistor is perfomed in terms of polysilicon thickness and its total area. The KrF excimer laser micromachine is used in assisting the resistor formation for a low pressure chemical vapor deposition (LPCVD) based polysilicon. Laser micromachine with three main parameters is used to aid the fabrication of the poly-resistor; namely as the pulse rate (i.e. number of laser pulses per second), laser beam size and laser energy. These parameters have been investigated to create the isolation between materials and also to achieve the desired poly-resistor shape. Preliminary results show that the 35 um beam size and 15 mJ of energy level is the most effective parameter to produce the pattern. Poly-resistor formation with 12 and 21 number of squares shows the total average resistance of 303.52 Ω and 210.14 Ω respectively. The laser micromachine process also significantly reduce the total time and number of process steps that are required for resistor fabrication.

Effects of Processing Parameters on KrF Excimer Laser Ablation Deposited ZrO2 Films

1991 ◽  
Vol 236 ◽  
Author(s):  
Gary A. Smith ◽  
Li-Chyong Chen ◽  
Mei-Chen Chuang
Keyword(s):  
Laser Ablation ◽  
Substrate Temperature ◽  
Excimer Laser ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Pressure Dependence ◽  
Laser Fluence ◽  
X Ray ◽  
Excimer Laser Ablation ◽  
Krf Excimer Laser

AbstractSystematic experiments have been carried out to characterize the yttria containing zirconia thin films on sapphire substrates by 248nm KrF excimer laser ablation. The deposition rate as a function of laser fluence and O2 pressure at room temperature was measured with a quartz crystal microbalance. The results show different threshold fluences for deposition in vacuum vs. oxygen. While the deposition rate increases with increasing fluence at a given oxygen pressure, the rate eventually saturates at a higher laser fluence. At a given fluence, the oxygen pressure dependence of the deposition rate shows a radical reduction when the O2 pressure increases from 10 mTorr to 1 Torr. Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy were used to obtain stoichiometric information. A very strong pressure dependence of the O/Zr ratio was observed. While the trend of increasing O/Zr and Zr/Y ratio with increasing O2 pressure is apparent, the correlations between O/Zr as well as Zr/Y ratio and other processing conditions are less obvious. RBS results indicate an increasing roughness at the interface between the ZrO2 film and the sapphire substrate as the oxygen pressure exceeds 50 mTorr. The structural information obtained from x-ray diffraction patterns indicates broadening of peak width with increasing laser fluence as well as decreasing substrate temperature. For the film deposited at a lower substrate temperature, a strong (002) texture was observed.

High-order harmonic generation by subpicosecond KrF excimer laser pulses

1996 ◽  
Vol 21 (1) ◽  
pp. 15 ◽  
Author(s):  
Yutaka Nagata ◽  
Katsumi Midorikawa ◽  
Minoru Obara ◽  
Koichi Toyoda
Keyword(s):  
Excimer Laser ◽  
Harmonic Generation ◽  
Laser Pulses ◽  
High Order ◽  
High Order Harmonic Generation ◽  
High Order Harmonic ◽  
Krf Excimer Laser

Effects of Processing Parameters on KrF Excimer Laser Ablation Deposited ZrO2 Films

1991 ◽  
Vol 235 ◽  
Author(s):  
Gary A. Smith ◽  
Li-Chyong Chen ◽  
Mei-Chen Chuang
Keyword(s):  
Laser Ablation ◽  
Substrate Temperature ◽  
Excimer Laser ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Pressure Dependence ◽  
Laser Fluence ◽  
X Ray ◽  
Excimer Laser Ablation ◽  
Krf Excimer Laser

ABSTRACTSystematic experiments have been carried out to characterize the yttria containing zirconia thin films on sapphire substrates by 248nm KrF excimer laser ablation. The deposition rate as a function of laser fluence and O2 pressure at room temperature was measured with a quartz crystal microbalance. The results show different threshold fluences for deposition in vacuum vs. oxygen. While the deposition rate increases with increasing fluence at a given oxygen pressure, the rate eventually saturates at a higher laser fluence. At a given fluence, the oxygen pressure dependence of the deposition rate shows a radical reduction when the O2 pressure increases from 10 mTorr to 1 Torr. Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy were used to obtain stoichiometric information. A very strong pressure dependence of the O/Zr ratio was observed. While the trend of increasing O/Zr and Zr/Y ratio with increasing O2 pressure is apparent, the correlations between O/Zr as well as Zr/Y ratio and other processing conditions are less obvious. RBS results indicate an increasing roughness at the interface between the ZrO2 film and the sapphire substrate as the oxygen pressure exceeds 50 mTorr. The structural information obtained from x-ray diffraction patterns indicates broadening of peak width with increasing laser fluence as well as decreasing substrate temperature. For the film deposited at a lower substrate temperature, a strong (002) texture was observed.

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