Fabrication and characterization of a cell electrostimulator device combining physical vapor deposition and laser ablation

2017 ◽  
Author(s):  
Angel Luis Aragón ◽  
Carmen Bao-Varela ◽  
Eliseo Pérez ◽  
Antonio Pazos ◽  
Daniel Nieto
Keyword(s):  
Laser Ablation ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
A Cell ◽  
Fabrication And Characterization

Fabrication and characterization of oxide ion conducting films, Zr1−xMxO2−δ(M = Y, Sc) on porous SOFC anodes, prepared by electron beam physical vapor deposition

2017 ◽  
Vol 1 (1) ◽  
pp. 103-111 ◽  
Author(s):  
Tae Ho Shin ◽  
Miyoung Shin ◽  
Geon-Woo Park ◽  
Shiwoo Lee ◽  
Sang-Kuk Woo ◽  
...  
Keyword(s):  
Electron Beam ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Fabrication And Characterization ◽  
Ion Conducting ◽  
Oxide Ion

Fabrication of improved and easily controlled thin electrolytes for SOFCsviaEB-PVD processing.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

Fabrication and Characterization of Si Nano-Columns by Femtosecond Laser

2012 ◽  
Vol 16 ◽  
pp. 15-20 ◽  
Author(s):  
Omid Tayefeh Ghalehbeygi ◽  
Vural Kara ◽  
Levent Trabzon ◽  
Selcuk Akturk ◽  
Huseyin Kizil
Keyword(s):  
Laser Ablation ◽  
Femtosecond Laser ◽  
Laser Beam ◽  
Chemical Etching ◽  
Silicon Surface ◽  
Laser Pulses ◽  
Laser Beam Profile ◽  
Fs Laser ◽  
Fabrication And Characterization

We fabricated Si Nano-columns by a femtosecond laser with various wavelengths and process parameters, whilst the specimen was submerged in water. The experiments were carried out by three types of wavelengths i.e. 1030 nm, 515nm, 343nm, with 500 fs laser pulses. The scales of these spikes are much smaller than micro spikes that are constructed by laser irradiation of silicon surface in vacuum or gases like SF6, Cl2. The Si nano-columns of 300 nm or less in width were characterized by SEM measurements. The formation of these Si Nano-columns that were revealed by SEM observation, indicates chemical etching with laser ablation occurred when surface exposed by laser beam. We observed 200 nm spikes height at the center of laser beam profile and the ones uniform in height at lateral incident area.

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