Fabrication and characterization of silver thin films using physical vapor deposition, and the investigation of annealing effects on their structures

2019 ◽  
Vol 6 (11) ◽  
pp. 116437
Author(s):  
Naseem Abbas ◽  
Muhammad Rizwan Shad ◽  
Muzamil Hussain ◽  
Syed Muhammad Zain Mehdi ◽  
Uzair Sajjad
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Annealing Effects ◽  
Silver Thin Films ◽  
Fabrication And Characterization

Deposition and Characterization of Carbon Nitride Films by Laser Processed Methods

1998 ◽  
Vol 526 ◽  
Author(s):  
Ashok Kumar ◽  
R. Alexandrescu ◽  
Michael A. George
Keyword(s):  
Thin Films ◽  
Comparative Analysis ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Carbon Nitride ◽  
Pyrolytic Graphite ◽  
Chemical Vapor ◽  
Nitrogen Atmosphere ◽  
Graphite Target

AbstractLaser assisted methods such as laser physical vapor deposition (LPVD) and laser induced chemical vapor deposition (LCVD) have been utilized to grow carbon nitride (CNx) films on various substrates. It has been shown that the both techniques produce good quality thin films of CNx. In LPVD, a laser beam (λ= 248 nm) has been used to ablate the pyrolytic graphite target in nitrogen atmosphere, where as CO2 laser was to irradiate carbon-nitrogen containing mixtures such as C2H2/N2O/NH3 in LCVD method. A comparative analysis will be presented in terms of structural properties of CNx films prepared by both techniques.

scholarly journals Electrical characterization of aluminum (Al) thin films measured by using four- point probe method

2013 ◽  
Vol 8 (2) ◽  
pp. 31-36 ◽  
Author(s):  
GP Panta ◽  
DP Subedi
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Electrical Characterization ◽  
Probe Method ◽  
Glass Substrates ◽  
Engineering And Technology

This paper reports the results of electrical characterization of aluminum thin films. Uniform Al thin films were deposited by physical vapor deposition (PVD) technique on glass substrates. The electrical resistivity of the films as a function of film thickness was studied. These parameters have been measured by four-point probe method. The electrical resistivity was obtained by the measurement of current (in mA) and voltage in (mV) through the probe. The results showed that resistivity of the film decreases linearly with the film thickness in the range of the thickness studied in this work. Kathmandu University Journal of Science, Engineering and Technology Vol. 8, No. II, December, 2012, 31-36 DOI: http://dx.doi.org/10.3126/kuset.v8i2.7322

scholarly journals Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
M. R. Khanlary ◽  
E. Salavati
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Optical Band Gap ◽  
Xrd Analysis ◽  
High Energy ◽  
Properties And Characterization ◽  
Different Doses

Physical vapor deposition of tin-doped lead selenide (Sn/PbSe) thin films on SiO2glass is described. Interaction of high-energy Ar+ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy.

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