Characterizing the internal structure of BCP filled contact holes with critical dimension small angle x-ray scattering (Conference Presentation)

Author(s):  
Daniel F. Sunday ◽  
Florian Delachat ◽  
Ahmed Gharbi ◽  
Guillaume Freychet ◽  
Raluca Tiron ◽  
...  
Author(s):  
Daniel F. Sunday ◽  
Wen-li Wu ◽  
Scott Barton ◽  
R. Joseph Kline

The semiconductor industry is in need of new, in-line dimensional metrology methods with higherspatial resolution for characterizing their next generation nanodevices. The purpose of this short course is to train the semiconductor industry on the NIST-developed critical dimension small angle X-ray scattering (CDSAXS) method. The topics will include both data processing and instrumentation. The short course will also provide an opportunity for discussion of the requirements for CDSAXS and the necessary improvements in X-ray source technology. Expected audience include semiconductor manufacturers, equipment manufacturers, and component manufacturers. The presentations were made at “X-ray Metrology for the Semiconductor Industry” short course at the National Institute of Standards and Technology on Aug. 25, 2016.


Author(s):  
Guillaume Freychet ◽  
Patrick Naulleau ◽  
Ronald Pandolfi ◽  
Dinesh Kumar ◽  
Joe Strzalka ◽  
...  

2019 ◽  
Vol 12 (4) ◽  
Author(s):  
Guillaume Freychet ◽  
Dinesh Kumar ◽  
Ron J. Pandolfi ◽  
Patrick Naulleau ◽  
Isvar Cordova ◽  
...  

2015 ◽  
Vol 48 (5) ◽  
pp. 1355-1363 ◽  
Author(s):  
Daniel F. Sunday ◽  
Scott List ◽  
Jasmeet S. Chawla ◽  
R. Joseph Kline

The semiconductor industry is exploring new metrology techniques capable of meeting the future requirement to characterize three-dimensional structure where the critical dimensions are less than 10 nm. X-ray scattering techniques are one candidate owing to the sub-Å wavelengths which are sensitive to internal changes in electron density. Critical-dimension small-angle X-ray scattering (CDSAXS) has been shown to be capable of determining the average shape of a line grating. Here it is used to study a set of line gratings patternedviaa self-aligned multiple patterning process, which resulted in a set of mirrored lines, where the individual line shapes were asymmetric. The spacing between lines was systematically varied by sub-nm shifts. The model used to simulate the scattering was developed in stages of increasing complexity in order to justify the large number of parameters included. Comparisons between the models at different stages of development demonstrate that the measurement can determine differences in line shapes within the superlattice. The shape and spacing between lines within a given set were determined to sub-nm accuracy. This demonstrates the potential for CDSAXS as a high-resolution nanostructure metrology tool.


2016 ◽  
Author(s):  
G. Freychet ◽  
C. Cadoux ◽  
Y. Blancquaert ◽  
S. Rey ◽  
M. Maret ◽  
...  

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