Design, Fabrication and Characterization of Ultra-High Voltage 4H-SiC MOSFET Transistors

Author(s):  
Xiao-Chuan Deng ◽  
Ben Tan ◽  
Jun-Tao Li ◽  
Xuan Li ◽  
Bo Zhang
2012 ◽  
Vol 211 ◽  
pp. 108-118 ◽  
Author(s):  
Loïc Baggetto ◽  
Raymond R. Unocic ◽  
Nancy J. Dudney ◽  
Gabriel M. Veith

2019 ◽  
Vol 240 ◽  
pp. 153-156 ◽  
Author(s):  
Jing Liu ◽  
Jiancang Su ◽  
Rui Li ◽  
Liang Zhao ◽  
Yuanrong Lu ◽  
...  

Author(s):  
Anna Szerling ◽  
Marek Ekielski ◽  
Maciej Kozubal ◽  
Karolina Pagowska ◽  
Andrzej Taube ◽  
...  

2020 ◽  
Vol 1014 ◽  
pp. 115-119
Author(s):  
Meng Ling Tao ◽  
Xiao Chuan Deng ◽  
Hao Wu ◽  
Yi Wen

A 10kV/100A SiC PiN rectifier with MRM-JTE (multiple-ring modulated junction termination extension) is designed, fabricated and characterized. The optimized MRM-JTE achieves high breakdown capability and extends the optimal JTE dose window. A 100μm thick epitaxial SiC PiN rectifier with a doping concentration of 5×1014cm−3 has been fabricated using a standard TZ-JTE process. A 5.4V forward voltage drop is obtained at 100A forward current. Moreover, a measured breakdown voltage is up to 13.5kV corresponding to about 96% of the ideal parallel plane junction. The fabricated device exhibits a low RON,SP of 3.76mΩ·cm2 at 200A/cm2 , and a high BFOM of 48.5GW/cm2. In addition, the C-V characteristic and reverse recovery switch characteristic are also analyzed. In this paper, the successfully fabrication of high-voltage SiC PiN rectifier provides a further development for high-voltage high-power SiC power modules.


Author(s):  
Haoxun Luo ◽  
Xianda Zhou ◽  
Zimin Chen ◽  
Yanli Pei ◽  
Xing Lu ◽  
...  

Author(s):  
Seyed Reza Mahmoudi

This paper demonstrates the design, Fabrication, and characterization of a novel electrohydrodynamic (EHD) conduction micropump. The device is based on LCP MEMS microfabrication technology. The novelty of design is due to its micro scale space between two electrodes. The pump consists of high voltage electrode, ground electrode, gasket, input/output ports, and electrical connections. The high voltage electrode consists of 75 centric annulus that were patterned on a 1.5mm LCP film with 30 μm copper clad layer as a substrate. The ground electrode was patterned using the same technology in the shape of a single circular plane avoiding any sharp point. A 230 μm -annuals liquid crystal polymer (LCP) gasket was used to fix the distance between the two substrates. Using 56 μm -resin epoxy film, two substrates are bonded together with constant distance 286 μm. The overall dimension of the micro pump is 65mm × 70mm. The flow direction in the pump was from ground electrode toward positive voltage electrode. In the absence of net flow, the device tests showed a maximum head of 105 Pa with 18 mW power consumption in absence of direct ion injection. The low level of power consumption with this pressure head generation promises a good chance to use the micropump in microgravity micro lubrication applications.


2015 ◽  
Vol 88 ◽  
pp. 167-173 ◽  
Author(s):  
Xiaochuan Deng ◽  
Han Xiao ◽  
Jia Wu ◽  
Huajun Shen ◽  
Chengzhan Li ◽  
...  

2015 ◽  
Vol 86 (8) ◽  
pp. 085104 ◽  
Author(s):  
Argenis V. Bilbao ◽  
James A. Schrock ◽  
William B. Ray ◽  
Mitchell D. Kelley ◽  
Shad L. Holt ◽  
...  

2013 ◽  
Vol 347-350 ◽  
pp. 1641-1645
Author(s):  
Run Hua Huang ◽  
Gang Chen ◽  
Song Bai ◽  
Rui Li ◽  
Yun Li ◽  
...  

Simulation, Fabrication and characteristics of high voltage, normally-off JFETs in 4H-SiC are presented. The devices were built on ND= 1.01015 cm-3 doped 50μm thick n-type epilayer grown on a n+ 4H-SiC. Parameters of edge termination have been optimized by simulations. Its blocking voltage exceeds 4500V at gate bias VG = -6V and forward drain current is in excess of 3A at gate bias VG = 3V and drain bias VD = 5V corresponding a current density of 80A/cm2.


2016 ◽  
Vol 12 (4) ◽  
pp. 397-401 ◽  
Author(s):  
Xinbo Zou ◽  
Yuefei Cai ◽  
Wing Cheung Chong ◽  
Kei May Lau

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