The opportunities of Rutherford backscattering spectroscopy for analysis of multilayer nanometer thin film structures

ABSTRACTInteraction of thin film Cu and CoSi2 has been studied using Rutherford backscattering spectroscopy and sheet resistance measurements. For temperatures ≤ 600° C. , no measurable diffusion of Cu into CoSi2 is observed.

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YBa2Cu3OxSuperconducting Thin-Film Formation Studied by Rutherford Backscattering Spectroscopy for the Multilayer Deposition Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.27.l613 ◽

1988 ◽

Vol 27 (Part 2, No. 4) ◽

pp. L613-L616 ◽

Cited By ~ 5

Author(s):

Masataka Ohkubo ◽

Tatsumi Hioki

Keyword(s):

Thin Film ◽

Film Formation ◽

Rutherford Backscattering ◽

Rutherford Backscattering Spectroscopy ◽

Deposition Method ◽

Multilayer Deposition ◽

Thin Film Formation

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The Kinetics of Ni-Al Spinel Growth Using Rutherford Backscattering Spectroscopy

MRS Proceedings ◽

10.1557/proc-94-299 ◽

1987 ◽

Vol 94 ◽

Cited By ~ 2

Author(s):

Y. Kouh Simpson ◽

E. G. Colgan ◽

C. B. Carter

Keyword(s):

Thin Film ◽

Heat Treatment ◽

Single Crystal ◽

Reaction Rate Constant ◽

Rutherford Backscattering ◽

Rutherford Backscattering Spectroscopy ◽

Single Crystal Substrate ◽

Crystal Substrate ◽

Complementary Techniques ◽

Kinetics Of

ABSTRACTUsing a planar thin-film specimen geometry, the growth kinetics of the spinel in NiOAl2O3 system has been studied with Rutherford backscattering spectroscopy. A thin-layer of Ni film is deposited by the electron-beam deposition technique onto single-crystal alumina substrates of different orientations including, (0001), {1120}, {1102} and {1100}. The subsequent heat-treatment in air then converts the Ni to NiO, thus producing a uniform layer of NiO with good adhesion between the NiO and the alumina. The kinetics of the Ni-Al spinel growth has been found to be different for different single-crystal substrate orientations. The kinetics behavior follows a parabolic growth-rate law for each orientation but shows a different reaction-rate constant. X-ray diffraction and transmission electron microscopy have been used as complementary techniques to confirm the phases that form at each stage of the heat treatment and the corresponding microstructures of the thin-film layers respectively.

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Thin-film reactions of Au with Ti, Zr, V, and Nb

Journal of Materials Research ◽

10.1557/jmr.1987.0028 ◽

1987 ◽

Vol 2 (1) ◽

pp. 28-34 ◽

Cited By ~ 16

Author(s):

E. G. Colgan ◽

J. W. Mayer

Keyword(s):

Thin Film ◽

Phase Diagrams ◽

Intermetallic Phases ◽

Rutherford Backscattering ◽

Rutherford Backscattering Spectroscopy ◽

Layer By Layer ◽

X Ray Diffraction ◽

Rich Phase ◽

X Ray

The thin-film interactions of Au with Ti, Zr, V, and Nb have been investigated between 350C and 700°C with Rutherford backscattering spectroscopy (RBS) and x-ray diffraction (XRD). Initially the most Au-rich phase is formed, except. with V, and it is followed sequentially by the more metal-rich ones in an increasingly layer-by-layer fashion. For Au reactions on Ti and Nb, all the intermetallic phases on the phase diagrams were observed. In the formation of Au4Ti, Au is the dominant moving species.

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