Thin-film reactions of Au with Ti, Zr, V, and Nb

1987 ◽  
Vol 2 (1) ◽  
pp. 28-34 ◽  
Author(s):  
E. G. Colgan ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Phase Diagrams ◽  
Intermetallic Phases ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Rich Phase ◽  
X Ray

The thin-film interactions of Au with Ti, Zr, V, and Nb have been investigated between 350C and 700°C with Rutherford backscattering spectroscopy (RBS) and x-ray diffraction (XRD). Initially the most Au-rich phase is formed, except. with V, and it is followed sequentially by the more metal-rich ones in an increasingly layer-by-layer fashion. For Au reactions on Ti and Nb, all the intermetallic phases on the phase diagrams were observed. In the formation of Au4Ti, Au is the dominant moving species.

Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti, and W

1989 ◽  
Vol 4 (4) ◽  
pp. 815-820 ◽  
Author(s):  
E. G. Colgan ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Phase Diagrams ◽  
Refractory Metals ◽  
Rutherford Backscattering ◽  
Phase Identification ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

The thin-film interactions of Al with refractory metals (Co, Cr, Mo, Ta, Ti, and W) have been investigated. The composition and thickness of the reacted aluminide layers were determined by Rutherford backscattering and phase identification was made by x-ray diffraction. Scanning electron microscopy was used to examine the lateral uniformity. The initial aluminide phases to grow are the Al-rich phases: Co2Al9, Cr2Al13, MoAl12, TaAl3, TiAl3, and WAI12. These are the most Al-rich phases on the phase diagrams. The reaction temperatures varied between 350 and 525 °C.

TiNi/GaAs Thin Film Structures for Gate Metallizations

2000 ◽  
Vol 648 ◽  
Author(s):  
Chichang Zhang ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Sheet Resistance ◽  
Intermetallic Phase ◽  
Intermetallic Phases ◽  
Schottky Barriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alloy Tini

AbstractShape memory alloy TiNi thin films on GaAs have been investigated. A series of TiNi compositions were electron beam deposited on GaAs initially as thin multilayers of Ti and Ni. The intermetallic phase of TiNi was formed by annealing and complete intermixing of the multilayers at 370oC. The intermetallic phases were investigated with X-ray diffraction techniques. The annealing kinetics and resistivity investigations were carried out in order to minimize the sheet resistance of the intermetallic phase. TiNi Schottky barriers on GaAs have been fabricated and their performance will be reported. Additional investigations on surface morphology using the energy dispersive spectroscopy as well as TEM investigations show the correlation between microstructure, intermetallic phase formation and sheet resistance.

Phase Formation and Phase Stability in the Al-Ti Thin Film System

1990 ◽  
Vol 213 ◽  
Author(s):  
L.R. Parks ◽  
D.A. Lilienfeld ◽  
P. BØRgesen ◽  
R. Raj
Keyword(s):  
Thin Film ◽  
Phase Stability ◽  
Rutherford Backscattering Spectrometry ◽  
Intermetallic Phases ◽  
Film System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures ◽  
Thin Film System ◽  
Sequential Formation

ABSTRACTThis study focuses on the sequential formation of aluminide phases during annealing of titanium and aluminum thin film bilayers. The formation of titanium-rich intermetallic phases at higher annealing temperatures is emphasized. Using Rutherford Backscattering Spectrometry (RBS) analysis, and x-ray diffraction, phases formed as a function of temperature have been identified. The phases Al3Ti through Ti3Al were observed over the temperature range 450–750°C, where reaction with the SiO2 substrate occurred. All phases were present as discreet layers within the samples with several layered phases coexisting at the higher temperatures.

Transmission electron microscope studies in special ceramics

1978 ◽  
Vol 36 (1) ◽  
pp. 268-269
Author(s):  
A. Zangvil ◽  
L.J. Gauckler ◽  
G. Schneider ◽  
M. Rühle
Keyword(s):  
Phase Diagrams ◽  
Crystal Structures ◽  
Thin Foil ◽  
Limited Extent ◽  
Complex Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electron Microscopes ◽  
Lattice Resolution

The use of high temperature special ceramics which are usually complex materials based on oxides, nitrides, carbides and borides of silicon and aluminum, is critically dependent on their thermomechanical and other physical properties. The investigations of the phase diagrams, crystal structures and microstructural features are essential for better understanding of the macro-properties. Phase diagrams and crystal structures have been studied mainly by X-ray diffraction (XRD). Transmission electron microscopy (TEM) has contributed to this field to a very limited extent; it has been used more extensively in the study of microstructure, phase transformations and lattice defects. Often only TEM can give solutions to numerous problems in the above fields, since the various phases exist in extremely fine grains and subgrain structures; single crystals of appreciable size are often not available. Examples with some of our experimental results from two multicomponent systems are presented here. The standard ion thinning technique was used for the preparation of thin foil samples, which were then investigated with JEOL 200A and Siemens ELMISKOP 102 (for the lattice resolution work) electron microscopes.

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