Interface study and preferred orientation of gallium oxide on silicon heterostructures

2021 ◽  
Author(s):  
Chao-Chun Yen ◽  
Tsun-Min Huang ◽  
Jung-Lung Chiang ◽  
Po-Wei Chen ◽  
Dong-Sing Wuu
Keyword(s):  
Gallium Oxide ◽  
Preferred Orientation ◽  
Silicon Heterostructures ◽  
Interface Study

scholarly journals Preparation and Performance of Gallium Nitride Powders with Preferred Orientation

2018 ◽  
Vol 142 ◽  
pp. 01009
Author(s):  
Liping Kang ◽  
Lingli Wang ◽  
Haiyan Wang ◽  
Xiaodong Zhang ◽  
Yongqiang Wang
Keyword(s):  
Grain Size ◽  
Gallium Nitride ◽  
Crystal Growth ◽  
Solid State ◽  
Gallium Oxide ◽  
Blue Shift ◽  
Single Crystal Growth ◽  
Preferred Orientation ◽  
Edge Emission ◽  
And Performance

The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K). Because of the solid-state reaction process that the gallium oxide transformed to GaN through solid-state gallium oxynitrides (GaOxNy) as inter-mediates, the Gallium nitride powders which are agglomerates of tens nanometers flake crystallites retain the rod shape and grain size of raw gallium oxide and have slight (002) plane preferred orientation. The near-edge emission of Gallium nitride at 346 nm has a blue shift of 187 meV attributed to a decrease in disorder of the material that is decided by the (002) plane preferred orientation. The preferred orientation and a blue shift have some kind of reference significance to single crystal growth.

The Microstructure of Shock-Synthesized Diamond

1967 ◽  
Vol 25 ◽  
pp. 324-325
Author(s):  
Lucien F. Trueb
Keyword(s):  
Single Crystals ◽  
Preferred Orientation ◽  
High Magnification ◽  
Texture Pattern ◽  
Shock Process ◽  
New Type ◽  
Diffraction Diagram

A new type of synthetic industrial diamond formed by an explosive shock process has been recently developed by the Du Pont Company. This material consists of a mixture of two basically different forms, as shown in Figure 1: relatively flat and compact aggregates of acicular crystallites, and single crystals in the form of irregular polyhedra with straight edges.Figure 2 is a high magnification micrograph typical for the fibrous aggregates; it shows that they are composed of bundles of crystallites 0.05-0.3 μ long and 0.02 μ. wide. The selected area diffraction diagram (insert in Figure 2) consists of a weak polycrystalline ring pattern and a strong texture pattern with arc reflections. The latter results from crystals having preferred orientation, which shows that in a given particle most fibrils have a similar orientation.

Existence of Cubic ZrO2 at 300°C on Bulk Zirconium

1969 ◽  
Vol 27 ◽  
pp. 166-167
Author(s):  
R.A. Ploc
Keyword(s):  
Metal Oxide ◽  
Metal Substrate ◽  
Preferred Orientation ◽  
Monoclinic Zirconia ◽  
Epitaxial Relationship

The manner in which ZrO2 forms on zirconium at 300°C in air has been discussed in the first reference. In short, monoclinic zirconia nucleates and grows with a preferred orientation relative to the metal substrate. The mode of growth is not well understood since an epitaxial relationship which gives minimum misfit between the zirconium ions in the metal/oxide combination is not realized. The reason may be associated with a thin cubic or tetragonal layer of ZrO2 between the inner oxygen saturated metal and the outer monoclinic zirconia.

Preferred orientation of rolling-induced ε martensite in an Fe-Mn-Si alloy

2003 ◽  
Vol 112 ◽  
pp. 365-368 ◽  
Author(s):  
K. K. Jee ◽  
W. Y. Jang ◽  
Y. H. Chung
Keyword(s):  
Preferred Orientation ◽  
Ε Martensite

Perancangan Website Sekolah Pada Subsystem User Interface (Study Kasus di Pesantren Persis 99 Rancabango)

2012 ◽  
Vol 9 (2) ◽  
pp. 338-348
Author(s):  
Muhammad Irsyad ◽  
Cepy Slamet ◽  
Ate Susanto ◽  
Keyword(s):  
User Interface ◽  
Interface Study

Gallium Oxide Schottky Barrier Diodes

2016 ◽  
Vol 136 (4) ◽  
pp. 479-483
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akito Kuramata
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes

Measurement of growth rates for single crystals and pressed tablets of CuSO4.5 H2O on a rotating disc

1989 ◽  
Vol 54 (11) ◽  
pp. 2951-2961 ◽  
Author(s):  
Miloslav Karel ◽  
Jaroslav Nývlt
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
Single Crystals ◽  
Growth Rates ◽  
Diffusion Coefficients ◽  
Preferred Orientation ◽  
Rotating Disc ◽  
Dissolution Rates ◽  
Rates Of Growth ◽  
Good Agreement

Measured growth and dissolution rates of single crystals and tablets were used to calculate the overall linear rates of growth and dissolution of CuSO4.5 H2O crystals. The growth rate for the tablet is by 20% higher than that calculated for the single crystal. It has been concluded that this difference is due to a preferred orientation of crystal faces on the tablet surface. Calculated diffusion coefficients and thicknesses of the diffusion and hydrodynamic layers in the vicinity of the growing or dissolving crystal are in good agreement with published values.

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