Deposition of diamondlike carbon films using XeCl excimer laser

1997 ◽  
Author(s):  
Mao-Kuo Wei ◽  
Robert Queitsch ◽  
Adolf Lang ◽  
Karsten Schutte ◽  
Hans W. Bergmann
Keyword(s):  
Excimer Laser ◽  
Carbon Films ◽  
Diamondlike Carbon ◽  
Xecl Excimer Laser

KrF excimer laser etching of diamondlike carbon films

1992 ◽  
Author(s):  
Taras V. Kononenko ◽  
Vitali I. Konov ◽  
Victor G. Ralchenko ◽  
V. E. Strelnitsky
Keyword(s):  
Excimer Laser ◽  
Carbon Films ◽  
Laser Etching ◽  
Diamondlike Carbon ◽  
Krf Excimer Laser

The ablation threshold in amorphous diamondlike carbon films exposed to an ArF excimer laser radiation

2000 ◽  
Vol 26 (12) ◽  
pp. 1032-1033
Author(s):  
N. A. Kaliteevskaya ◽  
O. I. Kon’kov ◽  
E. I. Terukov ◽  
R. P. Seisyan
Keyword(s):  
Laser Radiation ◽  
Excimer Laser ◽  
Ablation Threshold ◽  
Carbon Films ◽  
Diamondlike Carbon ◽  
Excimer Laser Radiation ◽  
Arf Excimer Laser

Poly-Silicon TFT Annealing with XeCl Excimer Laser.

2000 ◽  
Vol 28 (1) ◽  
pp. 24-28 ◽  
Author(s):  
Junichi SHIDA ◽  
Naoyuki KOBAYASHI ◽  
Hideaki KUSAMA
Keyword(s):  
Excimer Laser ◽  
Poly Silicon ◽  
Xecl Excimer Laser

Using Molecular-Beam Mass Spectrometry to Study the Pecvd of Diamondlike Carbon Films

1993 ◽  
Vol 334 ◽  
Author(s):  
I.B. Graff ◽  
R.A. Pugliese ◽  
P.R. Westmoreland
Keyword(s):  
Mass Spectrometry ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Film Growth ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Total Flow ◽  
Measured Concentration ◽  
Molecular Beam Mass Spectrometry ◽  
Diamondlike Carbon

AbstractMolecular-beam mass spectrometry has been used to study plasma-enhanced chemical vapor deposition (PECVD) of diamondlike carbon films. A threshold-ionization technique was used to identify and quantify species in the plasma. Mole fractions of H, H2, CH4, C2H2, C2H6 and Ar were measured in an 83.3% CH4/Ar mixture at a pressure of 0.1 torr and a total flow of 30 sccm. Comparisons were made between mole fractions measured at plasma powers of 25W and 50W. These results were compared to measured concentration profiles and to film growth rates.

Control of SF6 discharge gap switch by XeCl excimer laser

1991 ◽  
Vol 111 (4) ◽  
pp. 46-51 ◽  
Author(s):  
Hisato Okuda ◽  
Kazuhisa Katayama ◽  
Xiaojun Wang ◽  
Katsumi Masugata ◽  
Kiyoshi Yatsui
Keyword(s):  
Excimer Laser ◽  
Sf6 Discharge ◽  
Discharge Gap ◽  
Xecl Excimer Laser
Sign in / Sign up

Export Citation Format

Share Document