Ka-band monolithic GaAs PHEMT low-noise amplifiers for commercial wireless applications

1999 ◽  
Author(s):  
Huei Wang ◽  
Tzu-Hung Chen ◽  
D.C. Niu ◽  
Yi-Jen Chan ◽  
P.W. Kuo ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
Ka Band ◽  
Wireless Applications

High-performance Ka-band and V-band HEMT low-noise amplifiers

1988 ◽  
Vol 36 (12) ◽  
pp. 1598-1603 ◽  
Author(s):  
K.H.G. Duh ◽  
Pane-Chane Chao ◽  
P.M. Smith ◽  
L.F. Lester ◽  
B.R. Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Ka Band ◽  
V Band

Extrinsic and Intrinsic Modeling of InGaAs/InAlAs pHEMT for Wireless Applications

2015 ◽  
Vol 815 ◽  
pp. 369-373
Author(s):  
Norhawati Ahmad ◽  
S.S. Jamuar ◽  
M. Mohammad Isa ◽  
Siti Salwa Mat Isa ◽  
Muhammad Mahyiddin Ramli ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
Wireless Applications ◽  
Electron Mobility Transistors ◽  
Low Leakage ◽  
The University ◽  
University Of Manchester

This paper presents the linear modelling of high breakdown InP pseudomorphic High Electron Mobility Transistors (pHEMT) that have been developed and fabricated at the University of Manchester (UoM) for low noise applications mainly for the Square Kilometre Array (SKA) project. The ultra-low leakage properties of a novel InGaAs/InAlAs/InP pHEMTs structure were used to fabricate a series of transistor with total gate width ranging from 0.2 mm to 1.2 mm. The measured DC and S-Parameters data from the fabricated devices were then used for the transistors’ modelling. The transistors demonstrated to operate up to frequencies of 25 GHz. These transistors models are used in the design of Low Noise Amplifiers (LNAs) using fully Monolithic Microwave Integrated Circuit (MMIC) technology.

Analysis and optimum design of impedance matching for Ka-Band cryogenic low noise amplifiers

2009 ◽  
Author(s):  
Yang Hou ◽  
Ruming Wen ◽  
Lingyun Li ◽  
Hengrong Cui ◽  
Rong Qian ◽  
...  
Keyword(s):  
Optimum Design ◽  
Impedance Matching ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Ka Band

On-wafer noise characterization of low-noise amplifiers in the Ka-band

2003 ◽  
Vol 52 (5) ◽  
pp. 1606-1610 ◽  
Author(s):  
S. Long ◽  
L. Escotte ◽  
J. Graffeuil ◽  
F. Brasseau ◽  
J.L. Cazaux
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
Ka Band ◽  
Noise Characterization

scholarly journals Ka-band low noise amplifiers based on InAlN/GaN technologies

2015 ◽  
Author(s):  
S. D. Nsele ◽  
C. Robin ◽  
J. G. Tartarin ◽  
L. Escotte ◽  
S. Piotrowicz ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
Ka Band
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