AlGaN-based structures on sapphire for visible blind Schottky-barrier UV photodetectors: toward high-performance device applications

2000 ◽  
Author(s):  
Franck Omnes ◽  
Eva Monroy ◽  
Bernard Beaumont ◽  
Fernando Calle ◽  
Elias Munoz Merino ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Performance ◽  
Uv Photodetectors ◽  
Device Applications ◽  
Visible Blind

High Performance β‐Ga 2 O 3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS 2 and TaS 2

2021 ◽  
pp. 2010303
Author(s):  
Ki‐Tae Kim ◽  
Hye‐Jin Jin ◽  
Wonjun Choi ◽  
Yeonsu Jeong ◽  
Hyung Gon Shin ◽  
...  
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
High Performance ◽  
Large Work

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

L-Shaped High Performance Schottky Barrier FET as Dielectrically Modulated Label Free Biosensor

2021 ◽  
pp. 1-1
Author(s):  
Shazia Rashid ◽  
Faisal Bashir ◽  
Farooq A. Khanday ◽  
M. Rafiq Beigh
Keyword(s):  
Schottky Barrier ◽  
High Performance ◽  
Label Free

Designation of bevel junction termination extension structure for high-performance vertical GaN Schottky barrier diode

2021 ◽  
pp. 107048
Author(s):  
Tingting wang ◽  
Xiaobo Li ◽  
Taofei Pu ◽  
Shaoheng Cheng ◽  
Liuan Li ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Performance ◽  
Schottky Barrier Diode

Two-dimensional GeSe for high performance thin-film solar cells

2018 ◽  
Vol 6 (12) ◽  
pp. 5032-5039 ◽  
Author(s):  
Xingshuai Lv ◽  
Wei Wei ◽  
Cong Mu ◽  
Baibiao Huang ◽  
Ying Dai
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Schottky Barrier ◽  
High Performance ◽  
Thin Film Solar Cells ◽  
Two Dimensional ◽  
Photovoltaic Devices ◽  
Promising Candidate

Multilayer GeSe can be a promising candidate for flexible photovoltaic devices because of the low Schottky barrier at the back electrode and high PCE of ∼18%.

Self-powered High-performance Flexible GaN/ZnO Heterostructure UV Photodetectors with Piezo-phototronic Effect Enhanced Photoresponse

Nano Energy ◽  
2022 ◽  
pp. 106945
Author(s):  
Yiyao Peng ◽  
Junfeng Lu ◽  
Xiandi Wang ◽  
Wenda Ma ◽  
Miaoling Que ◽  
...  
Keyword(s):  
High Performance ◽  
Uv Photodetectors ◽  
Self Powered

High-performance stretchable conductive nanocomposites: materials, processes, and device applications

2019 ◽  
Vol 48 (6) ◽  
pp. 1566-1595 ◽  
Author(s):  
Suji Choi ◽  
Sang Ihn Han ◽  
Dokyoon Kim ◽  
Taeghwan Hyeon ◽  
Dae-Hyeong Kim
Keyword(s):  
High Performance ◽  
Filler Materials ◽  
Conductive Nanocomposites ◽  
Device Applications

This article reviews the cascade strategy of stretchable conductive nanocomposites where various filler materials are processed for stretchable electronic applications.

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