P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.
A robust, inexpensive, and scalable drop-casting process was successfully developed to fabricate highly efficient and robust UV photodetectors with uniform and continuous films of ZnSnO3 and Zn2SnO4–SnO2 nanoparticles for the first time. An extreme high responsivity of ∼0.5 A W−1 at 5.0 V bias was achieved with good visible-light rejection.
Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors
