High performance of InGaP/GaAs MSM photodetectors using Cu/Au Schottky contact

2000 ◽  
Author(s):  
ChangDa Tsai ◽  
Yow-Jon Lin ◽  
DayShan Liu ◽  
Ching-Ting M. Lee
Keyword(s):  
High Performance ◽  
Schottky Contact ◽  
Msm Photodetectors

THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

2007 ◽  
Vol 16 (04) ◽  
pp. 497-503 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Schottky Contact ◽  
Nitrogen Plasma ◽  
Porous Sample ◽  
Optical Studies ◽  
High Quality ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

scholarly journals Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO

2008 ◽  
Vol 93 (12) ◽  
pp. 123309 ◽  
Author(s):  
M. Nakano ◽  
T. Makino ◽  
A. Tsukazaki ◽  
K. Ueno ◽  
A. Ohtomo ◽  
...  
Keyword(s):  
High Performance ◽  
Schottky Contact ◽  
Visible Blind

High Performance Zinc Oxide Thin Film Transistors Through Improved Material Processing and Device Design

2014 ◽  
Author(s):  
Ahmad Hossein Adl ◽  
Samira Farsinezhad ◽  
Alex Ma ◽  
Douglas W. Barlage ◽  
Karthik Shankar
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Schottky Contact ◽  
Depletion Region ◽  
Charge Carriers ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Poor Control ◽  
High Throughput Method

Solution processing (SP) is a cheap, simple and high-throughput method for the fabrication of ZnO thin film transistors (TFTs). Lack of enhancement mode operation, poor crystallinity, traps, and poor control of the carrier concentration are some of the disadvantages of this method. The high intrinsic electron concentration of SP-ZnO makes saturation of TFTs non-trivial. We report on Schottky barrier thin film transistors (SB-TFT). By biasing the source Schottky contact in reverse bias, a depletion region is formed around the source contact hence depleting the region from the free charge carriers which produces the saturation of the device. The effect of the Schottky contact is illustrated by comparing the operation of SB-TFTs with that of conventional TFTs.

Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor

2015 ◽  
Vol 821-823 ◽  
pp. 436-439 ◽  
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Marian Badila ◽  
...  
Keyword(s):  
Barrier Height ◽  
Temperature Sensor ◽  
High Performance ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Post Annealing ◽  
Schottky Device ◽  
Post Annealing Temperature

The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni2Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni2Si). A nearly ideal Schottky device, with the barrier height approaching the high value of1.7eV, and a slight temperature dependence, was obtained after an annealing atTA=800°C.This high barrier height proves that Ni2Si is suitable as Schottky contact for temperature sensors, able to reliably operate up to450°C. Sensor sensitivity levels between1.00mV/°Cand2.70 mV/°Chave been achieved.

High-performance MSM photodetectors using Cu Schottky contacts

1997 ◽  
Vol 9 (5) ◽  
pp. 657-659 ◽  
Author(s):  
A.C. Davidson ◽  
F.W. Wise ◽  
R.C. Compton ◽  
D.T. Emerson ◽  
J.R. Shealy ◽  
...  
Keyword(s):  
High Performance ◽  
Schottky Contacts ◽  
Msm Photodetectors

High-performance large-area InGaAs MSM photodetectors with a pseudomorphic InGaP cap layer

1995 ◽  
Vol 7 (8) ◽  
pp. 914-916 ◽  
Author(s):  
Rong-Heng Yuang ◽  
Hung-Chang Shieh ◽  
Yi-Jiunn Chien ◽  
Yi-Jen Chan ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
High Performance ◽  
Large Area ◽  
Cap Layer ◽  
Msm Photodetectors
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