High-speed CMOS: Si light emitters for on-chip optical interconnects

2002 ◽  
Author(s):  
Amitabh Chatterjee ◽  
Bharat L. Bhuva ◽  
William C. Cieslik
Keyword(s):  
Optical Interconnects ◽  
High Speed ◽  
Light Emitters ◽  
On Chip

High-Speed and Stable Operation of Highly Unidirectional III-V/Silicon Microring Lasers for On-chip Optical Interconnects

CLEO: 2015 ◽  
2015 ◽  
Author(s):  
Kazuya Ohira ◽  
Hirotaka Uemura ◽  
Norio Iizuka ◽  
Haruhiko Yoshida ◽  
Hiroshi Uemura ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
High Speed ◽  
Stable Operation ◽  
On Chip

Toward high-speed, low-cost, on-chip silicon optical interconnects

SPIE Newsroom ◽  
2011 ◽  
Author(s):  
Xi Xiao ◽  
Haihua Xu ◽  
Yingtao Hu ◽  
Zhiyong Li ◽  
Yude Yu ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
High Speed ◽  
Low Cost ◽  
On Chip

scholarly journals Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers

2017 ◽  
Vol 8 ◽  
pp. 38-44 ◽  
Author(s):  
Felix Pyatkov ◽  
Svetlana Khasminskaya ◽  
Vadim Kovalyuk ◽  
Frank Hennrich ◽  
Manfred M Kappes ◽  
...  
Keyword(s):  
Light Pulse ◽  
Optical Waveguides ◽  
High Speed ◽  
Pulse Generation ◽  
Light Sources ◽  
Light Emitters ◽  
Nanophotonic Devices ◽  
Decay Times ◽  
On Chip ◽  
Electrical Bias

Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources.

Integrated Optoelectronic Materials and Circuits for Optical Interconnects

1987 ◽  
Vol 108 ◽  
Author(s):  
L. D. Hutcheson
Keyword(s):  
Optical Interconnects ◽  
High Speed ◽  
Optoelectronic Devices ◽  
Critical Issue ◽  
Optoelectronic Materials ◽  
Input Output ◽  
Strong Case ◽  
On Chip

ABSTRACTConventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs Integrated Optoelectronic Circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected.

scholarly journals Ultracompact and low-power-consumption silicon thermo-optic switch for high-speed data

Nanophotonics ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 937-945
Author(s):  
Ruihuan Zhang ◽  
Yu He ◽  
Yong Zhang ◽  
Shaohua An ◽  
Qingming Zhu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Pulse Amplitude ◽  
Telecommunication Networks ◽  
Low Power Consumption ◽  
Power Efficient ◽  
High Speed Data ◽  
On Chip

AbstractUltracompact and low-power-consumption optical switches are desired for high-performance telecommunication networks and data centers. Here, we demonstrate an on-chip power-efficient 2 × 2 thermo-optic switch unit by using a suspended photonic crystal nanobeam structure. A submilliwatt switching power of 0.15 mW is obtained with a tuning efficiency of 7.71 nm/mW in a compact footprint of 60 μm × 16 μm. The bandwidth of the switch is properly designed for a four-level pulse amplitude modulation signal with a 124 Gb/s raw data rate. To the best of our knowledge, the proposed switch is the most power-efficient resonator-based thermo-optic switch unit with the highest tuning efficiency and data ever reported.

scholarly journals On-chip trans-dimensional plasmonic router

Nanophotonics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 3357-3365 ◽  
Author(s):  
Shaohua Dong ◽  
Qing Zhang ◽  
Guangtao Cao ◽  
Jincheng Ni ◽  
Ting Shi ◽  
...  
Keyword(s):  
High Speed ◽  
High Efficiency ◽  
Incident Angle ◽  
Reciprocal Lattice ◽  
Plasmonic Waveguide ◽  
Optical Diffraction ◽  
Local Dynamic ◽  
Phase Gradient ◽  
On Chip ◽  
Plasmon Polaritons

AbstractPlasmons, as emerging optical diffraction-unlimited information carriers, promise the high-capacity, high-speed, and integrated photonic chips. The on-chip precise manipulations of plasmon in an arbitrary platform, whether two-dimensional (2D) or one-dimensional (1D), appears demanding but non-trivial. Here, we proposed a meta-wall, consisting of specifically designed meta-atoms, that allows the high-efficiency transformation of propagating plasmon polaritons from 2D platforms to 1D plasmonic waveguides, forming the trans-dimensional plasmonic routers. The mechanism to compensate the momentum transformation in the router can be traced via a local dynamic phase gradient of the meta-atom and reciprocal lattice vector. To demonstrate such a scheme, a directional router based on phase-gradient meta-wall is designed to couple 2D SPP to a 1D plasmonic waveguide, while a unidirectional router based on grating metawall is designed to route 2D SPP to the arbitrarily desired direction along the 1D plasmonic waveguide by changing the incident angle of 2D SPP. The on-chip routers of trans-dimensional SPP demonstrated here provide a flexible tool to manipulate propagation of surface plasmon polaritons (SPPs) and may pave the way for designing integrated plasmonic network and devices.

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