Multiple channeled filtering in one-dimensional photonic quantum-well and super-lattice structures

2007 ◽  
Author(s):  
Jiebin Huang ◽  
Peng Han ◽  
Chaoxiong Chen ◽  
Guanling Yang
Keyword(s):  
Quantum Well ◽  
Lattice Structures ◽  
One Dimensional ◽  
Super Lattice ◽  
Photonic Quantum Well

scholarly journals Photon confinement in one-dimensional photonic quantum-well structures of nanoporous silicon

2003 ◽  
Vol 126 (3) ◽  
pp. 125-128 ◽  
Author(s):  
S.H. Xu ◽  
Z.H. Xiong ◽  
L.L. Gu ◽  
Y. Liu ◽  
X.M. Ding ◽  
...  
Keyword(s):  
Quantum Well ◽  
Nanoporous Silicon ◽  
Quantum Well Structures ◽  
One Dimensional ◽  
Photon Confinement ◽  
Photonic Quantum Well

CONTROLLING TUNNELING MODES BY A PHOTONIC QUANTUM WELL STRUCTURE BASED ON ZERO EFFECTIVE PHASE GAP

2013 ◽  
Vol 27 (10) ◽  
pp. 1350065
Author(s):  
TAO BO ◽  
YU FENG ◽  
FU-LI LI
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Light Propagation ◽  
Incident Angle ◽  
Barrier Thickness ◽  
Physical Reason ◽  
One Dimensional ◽  
Photonic Quantum Well ◽  
Effective Phase ◽  
Weakly Dependent

Light propagation through one-dimensional photonic quantum well (PQW) structures consisting of single-negative (SNG) materials is investigated theoretically. It is found that, based on the zero-effective-phase gap mechanism, the resonant tunneling modes can be manipulated to realized multiple channeled filters which are not only weakly dependent on the incident angle and polarization, but also insensitive to the deviation of the photonic barrier thickness. These properties are advanced to conventional PQW structures and the physical reason for the remarkable features of the proposed PQW structure is analyzed.

Characteristics of light tunneling channel in one-dimensional photonic quantum well

Optik ◽  
2015 ◽  
Vol 126 (7-8) ◽  
pp. 821-823
Author(s):  
Wen-li Liu ◽  
Xiu-ying Gao ◽  
Ting-ting Tang ◽  
Xiu-jun He
Keyword(s):  
Quantum Well ◽  
One Dimensional ◽  
Photonic Quantum Well

Preparation of one-dimensional porous silicon photonic quantum-well structures

2003 ◽  
Vol 76 (4) ◽  
pp. 589-592 ◽  
Author(s):  
S.H. Xu ◽  
Z.H. Xiong ◽  
L.L. Gu ◽  
Y. Liu ◽  
X.M. Ding ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Well ◽  
Quantum Well Structures ◽  
One Dimensional ◽  
Silicon Photonic ◽  
Photonic Quantum Well

Backscattered Electron Imaging of GaAs/AlGaAs Super Lattice Structures with an Ultra-High- Resolution SEM

1988 ◽  
Vol 46 ◽  
pp. 204-205
Author(s):  
Kazumichi Ogura ◽  
Michael M. Kersker
Keyword(s):  
High Resolution ◽  
Layer Structure ◽  
High Sensitivity ◽  
Beam Current ◽  
Electron Beam Current ◽  
Lattice Structures ◽  
Super Lattice ◽  
Different Types ◽  
Backscattered Electron ◽  
Electron Imaging

Backscattered electron (BE) images of GaAs/AlGaAs super lattice structures were observed with an ultra high resolution (UHR) SEM JSM-890 with an ultra high sensitivity BE detector. Three different types of super lattice structures of GaAs/AlGaAs were examined. Each GaAs/AlGaAs wafer was cleaved by a razor after it was heated for approximately 1 minute and its crosssectional plane was observed.First, a multi-layer structure of GaAs (100nm)/AlGaAs (lOOnm) where A1 content was successively changed from 0.4 to 0.03 was observed. Figures 1 (a) and (b) are BE images taken at an accelerating voltage of 15kV with an electron beam current of 20pA. Figure 1 (c) is a sketch of this multi-layer structure corresponding to the BE images. The various layers are clearly observed. The differences in A1 content between A1 0.35 Ga 0.65 As, A1 0.4 Ga 0.6 As, and A1 0.31 Ga 0.69 As were clearly observed in the contrast of the BE image.

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