Impurity segregation coefficient measurements in LiF-LuF 3 -YF 3 systems doped by Nd3+

Author(s):  
M. A. Marisov ◽  
E. Yu. Koryakina ◽  
A. K. Naumov ◽  
V. V. Semashko ◽  
S. L. Korableva ◽  
...  
1983 ◽  
Vol 23 ◽  
Author(s):  
Jun-ichi Chikawa ◽  
Fumio Sato ◽  
Tadasu Sunada

ABSTRACTAtomic processes at the interface in regrowth following laser induced melting were investigated by observing behavior of impurity segregation. The interfacial segregation coefficient k* was obtained from depth profiles of solute atoms redistributed by laser irradiation of uniformly doped Si, Ge, and GayAl1−yAs crystals. It was found that k*=k0 for B in Si, Ga in Ge ih the growth rate range of 1 m/s. It is concluded that rapid growth freezes a state of liquid monolayer adjacent to the interface which has the character of ideal solution from dilute to eutectic composition for dopant-silicon systems and in the entire range of composition for the mixed crystal.


1993 ◽  
Vol 3 (2) ◽  
pp. 179-183 ◽  
Author(s):  
Yu. S. Netchaev ◽  
L. V. Mukhina
Keyword(s):  

1986 ◽  
Vol 88 ◽  
Author(s):  
D. R. Gabbe ◽  
R. C. Folweiler ◽  
F. X. Pink

ABSTRACTLanthanum chloride was synthesized by reacting La2O3 with CCl4. Purification carried out by zone refining resulted in reduction of Nd and Eu concentrations by at least a factor of 103. Impurity segregation coefficients were calculated from the concentration profiles in the charge measured by neutron activation analysis. Values of 0.85, 0.5, and 0.15 were found for Ce, Nd and Eu while a value of 0.65 was obtained for Pr from a plot of measured distribution coefficient versus ionic radius. These results show the feasibility of removing rare earth impurities to the ppb level from LaCl3. After purification, LaC13 is converted to LaF3


1994 ◽  
Vol 22 (1-12) ◽  
pp. 318-322 ◽  
Author(s):  
B. M. Reichl ◽  
M. M. Eisl ◽  
S. D. Böhmig ◽  
H. Störi
Keyword(s):  

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