Design and characterization of radiation tolerant CMOS image sensor for space applications

Author(s):  
Xinyang Wang ◽  
Jan Bogaerts ◽  
Werner Ogiers ◽  
Gerd Beeckman ◽  
Guy Meynants
Author(s):  
Younggeun Ji ◽  
Jeonghoon Kim ◽  
Jungin Kim ◽  
Miji Lee ◽  
Jaeheon Noh ◽  
...  

Author(s):  
Xinyuan Qian ◽  
Hang Yu ◽  
Bo Zhao ◽  
Shoushun Chen ◽  
Kay Soon Low

2017 ◽  
Vol 2017 (1) ◽  
pp. 000406-000410
Author(s):  
H. Lundén ◽  
A. Määttänen ◽  
L. Murphy

Abstract The aim of the study was to evaluate the use of a novel bonding technology to create a sapphire-ceramic package for CMOS image sensor devices. The package must be robust enough to be used in space flight applications: it must protect the device from external environmental conditions during testing, storage and use. A series of tests were executed to ensure the package quality. The package needs to be radiation-tolerant to ensure reliability of data in high radiation environments, such as in space. Package hermeticity is an important reliability requirement not only in space but also in other applications such as medical implants, military, nuclear inspection and telecoms. It was proved that novel bonding technique enables direct sapphire to ceramic bonding: robust packages were manufactured. A significant improvement in moisture levels was observed compared to (typically)epoxy sealed packages: detected moisture levels were of only one tenth of what is commonly seen in the stressed image sensor packages. Environmental changes had no influence on the package & device functionality or quality.


Sensors ◽  
2019 ◽  
Vol 19 (7) ◽  
pp. 1505 ◽  
Author(s):  
Woo-Tae Kim ◽  
Cheonwi Park ◽  
Hyunkeun Lee ◽  
Ilseop Lee ◽  
Byung-Geun Lee

This paper presents a high full well capacity (FWC) CMOS image sensor (CIS) for space applications. The proposed pixel design effectively increases the FWC without inducing overflow of photo-generated charge in a limited pixel area. An MOS capacitor is integrated in a pixel and accumulated charges in a photodiode are transferred to the in-pixel capacitor multiple times depending on the maximum incident light intensity. In addition, the modulation transfer function (MTF) and radiation damage effect on the pixel, which are especially important for space applications, are studied and analyzed through fabrication of the CIS. The CIS was fabricated using a 0.11 μm 1-poly 4-metal CIS process to demonstrate the proposed techniques and pixel design. A measured FWC of 103,448 electrons and MTF improvement of 300% are achieved with 6.5 μm pixel pitch.


2010 ◽  
Author(s):  
J. Gambino ◽  
B. Leidy ◽  
C. Musante ◽  
K. Ackerson ◽  
B. Guthrie ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document