Direct sapphire to ceramic bonding for CMOS image sensor packaging using room temperature bonding technology

2017 ◽  
Vol 2017 (1) ◽  
pp. 000406-000410
Author(s):  
H. Lundén ◽  
A. Määttänen ◽  
L. Murphy
Keyword(s):  
Room Temperature ◽  
Environmental Changes ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Medical Implants ◽  
High Radiation ◽  
Sensor Devices ◽  
Bonding Technology ◽  
Radiation Tolerant ◽  
Bonding Technique

Abstract The aim of the study was to evaluate the use of a novel bonding technology to create a sapphire-ceramic package for CMOS image sensor devices. The package must be robust enough to be used in space flight applications: it must protect the device from external environmental conditions during testing, storage and use. A series of tests were executed to ensure the package quality. The package needs to be radiation-tolerant to ensure reliability of data in high radiation environments, such as in space. Package hermeticity is an important reliability requirement not only in space but also in other applications such as medical implants, military, nuclear inspection and telecoms. It was proved that novel bonding technique enables direct sapphire to ceramic bonding: robust packages were manufactured. A significant improvement in moisture levels was observed compared to (typically)epoxy sealed packages: detected moisture levels were of only one tenth of what is commonly seen in the stressed image sensor packages. Environmental changes had no influence on the package & device functionality or quality.

scholarly journals Soft X-rays spectroscopy with a commercial CMOS image sensor at room temperature

2020 ◽  
Vol 167 ◽  
pp. 108354 ◽  
Author(s):  
Miguel Sofo Haro ◽  
Fabricio Alcalde Bessia ◽  
Martín Pérez ◽  
Juan Jerónimo Blostein ◽  
Darío Federico Balmaceda ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
X Rays

Design of a radiation tolerant CMOS image sensor

2011 ◽  
Author(s):  
Xinyuan Qian ◽  
Hang Yu ◽  
Bo Zhao ◽  
Shoushun Chen ◽  
Kay Soon Low
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Radiation Tolerant

Design and characterization of radiation tolerant CMOS image sensor for space applications

2011 ◽  
Author(s):  
Xinyang Wang ◽  
Jan Bogaerts ◽  
Werner Ogiers ◽  
Gerd Beeckman ◽  
Guy Meynants
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Space Applications ◽  
Radiation Tolerant

Development of Wafer Level Chip Size Packaging Process and its Application to the CMOS Image Sensor Module for Medical Device

2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Medical Device ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Wafer Level ◽  
Packaging Process ◽  
Sensor Module ◽  
Chip Size

Current and Future 3D-LSI Technology for the Image Sensor Devices

2008 ◽  
Author(s):  
Makoto Motoyoshi ◽  
Hirofumi Nakamura ◽  
Manabu Bonkohara ◽  
Mitsumasa Koyanagi
Keyword(s):  
Image Sensor ◽  
Sensor Devices

An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors

2020 ◽  
Vol 2020 (7) ◽  
pp. 143-1-143-6 ◽  
Author(s):  
Yasuyuki Fujihara ◽  
Maasa Murata ◽  
Shota Nakayama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa
Keyword(s):  
Linear Response ◽  
Dynamic Range ◽  
Signal To Noise Ratio ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Signal To Noise ◽  
Single Exposure ◽  
Two Stage ◽  
Noise Ratio ◽  
Maximum Signal

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

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