<title>High Speed Direct Write Electron Beam System</title>

ABSTRACTGiant magnetoresistive (GMR) materials-based magnetic random access memory (MRAM) has become attractive due to non-volatility, speed and density1. The vertical MRAM (VMRAM) design model shows good signal level and high speed and density potential. The memory cell for the VMRAM model is a ring shaped magnetic material multilayer, which ensures high repeatability and low switching energy. This GMR structure, however, is difficult to pattern as it contains materials such as Ni, Fe, Co, and Cu, which are difficult to dry etch because they lack volatile etch products. This work shows that it is possible to overcome the difficulties associated with etching GMR materials by using hydrogen silsesquioxane (HSQ) as an etch mask. We have used HSQ in a direct-write electron-beam lithography system with a dose of 600 μC/cm2, and in a Ga+ ion focused ion beam (FIB) system with a dose of 12 μC/cm2. Both are followed by development and an argon plasma etch at 10mTorr and 100W RIE power. The HSQ layer provides high resolution as well as good etching resistance. Electron-beam exposed HSQ shows a 1:1.5 selectivity over the GMR film stack and the FIB exposed HSQ showed an improved etch selectivity of 1:1. Ring shaped GMR structures with a 75/225 nm (ID/OD) have been fabricated, which corresponds to a memory density of 4Gb/in2.

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Image quality vs data obtainment in biological electron microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100141950 ◽

1986 ◽

Vol 44 ◽

pp. 42-43

Author(s):

J. E. Johnson

Keyword(s):

Electron Microscopy ◽

Endoplasmic Reticulum ◽

Electron Beam ◽

Image Quality ◽

High Speed ◽

Early Period ◽

Early Years ◽

Fluorescent Screen ◽

Embedding Medium

In the early years of biological electron microscopy, scientists had their hands full attempting to describe the cellular microcosm that was suddenly before them on the fluorescent screen. Mitochondria, Golgi, endoplasmic reticulum, and other myriad organelles were being examined, micrographed, and documented in the literature. A major problem of that early period was the development of methods to cut sections thin enough to study under the electron beam. A microtome designed in 1943 moved the specimen toward a rotary “Cyclone” knife revolving at 12,500 RPM, or 1000 times as fast as an ordinary microtome. It was claimed that no embedding medium was necessary or that soft embedding media could be used. Collecting the sections thus cut sounded a little precarious: “The 0.1 micron sections cut with the high speed knife fly out at a tangent and are dispersed in the air. They may be collected... on... screens held near the knife“.

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ELECTRON BEAM DIRECT WRITE EFFECTS ON CMOS DEVICES

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1988460 ◽

1988 ◽

Vol 49 (C4) ◽

pp. C4-291-C4-294

Author(s):

K. BARLOW

Keyword(s):

Electron Beam ◽

Direct Write

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Review of Development and Performance Evaluation of Active-matrix Nanocrystalline Si Electron Emitter Array for Massively Parallel Electron Beam Direct-write Lithography

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.135.221 ◽

2015 ◽

Vol 135 (6) ◽

pp. 221-229

Author(s):

Naokatsu Ikegami ◽

Akira Kojima ◽

Hiroshi Miyaguchi ◽

Takashi Yoshida ◽

Shinya Yoshida ◽

...

Keyword(s):

Electron Beam ◽

Performance Evaluation ◽

Massively Parallel ◽

Direct Write ◽

Active Matrix ◽

Electron Emitter ◽

Emitter Array ◽

And Performance ◽

Nanocrystalline Si

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HIGH SPEED ELECTRON BEAM THERAPY

American Journal of Roentgenology ◽

10.2214/ajr.99.4.932 ◽

1967 ◽

Vol 99 (4) ◽

pp. 932-938 ◽

Cited By ~ 2

Author(s):

A. ZUPPINGER

Keyword(s):

Electron Beam ◽

High Speed ◽

Electron Beam Therapy

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Expanding 3D Nanoprinting Performance by Blurring the Electron Beam

Micromachines ◽

10.3390/mi12020115 ◽

2021 ◽

Vol 12 (2) ◽

pp. 115

Author(s):

Lukas Seewald ◽

Robert Winkler ◽

Gerald Kothleitner ◽

Harald Plank

Keyword(s):

Electron Beam ◽

Direct Write ◽

Design Flexibility ◽

Individual Branch ◽

Inclination Angles ◽

3D Architecture ◽

20 Nm ◽

Surface Morphologies ◽

Nm Range ◽

Mechanical Rigidity

Additive, direct-write manufacturing via a focused electron beam has evolved into a reliable 3D nanoprinting technology in recent years. Aside from low demands on substrate materials and surface morphologies, this technology allows the fabrication of freestanding, 3D architectures with feature sizes down to the sub-20 nm range. While indispensably needed for some concepts (e.g., 3D nano-plasmonics), the final applications can also be limited due to low mechanical rigidity, and thermal- or electric conductivities. To optimize these properties, without changing the overall 3D architecture, a controlled method for tuning individual branch diameters is desirable. Following this motivation, here, we introduce on-purpose beam blurring for controlled upward scaling and study the behavior at different inclination angles. The study reveals a massive boost in growth efficiencies up to a factor of five and the strong delay of unwanted proximal growth. In doing so, this work expands the design flexibility of this technology.

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