ELECTRON BEAM DIRECT WRITE EFFECTS ON CMOS DEVICES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-291-C4-294
Author(s):  
K. BARLOW
Keyword(s):  
Electron Beam ◽  
Direct Write

scholarly journals Expanding 3D Nanoprinting Performance by Blurring the Electron Beam

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 115
Author(s):  
Lukas Seewald ◽  
Robert Winkler ◽  
Gerald Kothleitner ◽  
Harald Plank
Keyword(s):  
Electron Beam ◽  
Direct Write ◽  
Design Flexibility ◽  
Individual Branch ◽  
Inclination Angles ◽  
3D Architecture ◽  
20 Nm ◽  
Surface Morphologies ◽  
Nm Range ◽  
Mechanical Rigidity

Additive, direct-write manufacturing via a focused electron beam has evolved into a reliable 3D nanoprinting technology in recent years. Aside from low demands on substrate materials and surface morphologies, this technology allows the fabrication of freestanding, 3D architectures with feature sizes down to the sub-20 nm range. While indispensably needed for some concepts (e.g., 3D nano-plasmonics), the final applications can also be limited due to low mechanical rigidity, and thermal- or electric conductivities. To optimize these properties, without changing the overall 3D architecture, a controlled method for tuning individual branch diameters is desirable. Following this motivation, here, we introduce on-purpose beam blurring for controlled upward scaling and study the behavior at different inclination angles. The study reveals a massive boost in growth efficiencies up to a factor of five and the strong delay of unwanted proximal growth. In doing so, this work expands the design flexibility of this technology.

Fabrication of submicron microwave bipolar transistors by direct write electron beam lithography

1992 ◽  
Vol 19 (1-4) ◽  
pp. 737-740
Author(s):  
M.N. Webster ◽  
A.H. Verbruggen ◽  
J. Romijn ◽  
H.F.F. Jos ◽  
P.M.A. Moors ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Bipolar Transistors ◽  
Direct Write

scholarly journals Resist Design Considerations for Direct Write and Projection Electron-Beam Lithography Technologies.

1996 ◽  
Vol 9 (4) ◽  
pp. 663-675 ◽  
Author(s):  
Anthony E. Novembre ◽  
Regine G. Tarascon ◽  
Steven D. Berger ◽  
Chris J. Biddick ◽  
Myrtle I. Blakey ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Direct Write ◽  
Design Considerations

Application of direct-write electron-beam lithography for deep-submicron fabrication

1996 ◽  
Author(s):  
Shyi-Long Shy ◽  
Jen Y. Yew ◽  
Kazumitsu Nakamura ◽  
Chun-Yen Chang
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Deep Submicron ◽  
Direct Write

A Large Range Compliant Nano-Manipulator Supporting Electron Beam Lithography

2022 ◽  
pp. 1-48
Author(s):  
Yijie Liu ◽  
Zhen Zhang
Keyword(s):  
Electron Beam ◽  
Natural Frequency ◽  
High Precision ◽  
Electron Beam Lithography ◽  
Optimization Design ◽  
Large Range ◽  
Direct Write ◽  
Motion Stage ◽  
Cross Axis ◽  
Precision Motion

Abstract Electron beam lithography (EBL) is an important lithographic process of scanning a focused electron beam (e-beam) to direct write a custom pattern with nanometric accuracy. Due to the very limited field of the focused election beam, a motion stage is needed to move the sample to the e-beam field for processing large patterns. In order to eliminate the stitching error induced by the existing “step and scan” process, we in this paper propose a large range compliant nano-manipulator so that the manipulator and the election beam can be moved in a simultaneous manner. We also present an optimization design for the geometric parameters of the compliant manipulator under the vacuum environment. Experimental results demonstrate 1 mm × 1 mm travel range with high linearity, ~ 0.5% cross-axis error and 5 nm resolution. Moreover, the high natural frequency (~ 56 Hz) of the manipulator facilitates it to achieve high-precision motion of EBL.

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