Effects Of Grain Boundaries On Channel Conduction In Thin Film Polysilicon On Silicon-Dioxide Metal Oxide Semiconductor Field Effect Transistors (SOI MOSFETs)

Mapping Intimacies ◽

10.1117/12.934956 ◽

1983 ◽

Author(s):

J. G. Fossum ◽

A. Ortiz ◽

H.-K Lim ◽

H.-W. Lam

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Silicon Dioxide ◽

Grain Boundaries ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4916 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4916-4922 ◽

Author(s):

Kunihiro Suzuki ◽

Shigeo Satoh ◽

Tetsu Tanaka ◽

Satoshi Ando

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Analytical Models ◽

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Fabrication of n-channel metal–oxide–semiconductor field-effect transistors with 0.2 μm gate lengths in 500 Å thin film silicon on sapphire

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585950 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2954

Author(s):

P. R. de la Houssaye

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Film Silicon

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Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.6290 ◽

1998 ◽

Vol 37 (Part 1, No. 12A) ◽

pp. 6290-6294

Author(s):

Yasuhiro Sato ◽

Toshihiko Kosugi ◽

Toshiaki Tsuchiya ◽

Hiromu Ishii

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Drain Region ◽

Ultra Thin Film

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A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3173179 ◽

2009 ◽

Vol 106 (2) ◽

pp. 024504 ◽

Author(s):

Kiran Sharma ◽

D. P. Joshi

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Electrical Conduction ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Thin Film

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Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1417995 ◽

2002 ◽

Vol 91 (1) ◽

pp. 420 ◽

Author(s):

Jianan Yang ◽

Gerold W. Neudeck ◽

John P. Denton

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Stacking Fault ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Thin Film Silicon

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An Efficient Quantum-Based Model for the Threshold Voltage of Thin Film Double Gate/Silicon on Insulator Silicon Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.024304 ◽

2010 ◽

Vol 49 (2) ◽

pp. 024304 ◽

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

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Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.6948 ◽

2004 ◽

Vol 43 (10) ◽

pp. 6948-6956 ◽

Author(s):

Yasuhiro Sato ◽

Toshiaki Tsuchiya ◽

Yuichi Kado

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Series Resistance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l855 ◽

1998 ◽

Vol 37 (Part 2, No. 7B) ◽

pp. L855-L858 ◽

Author(s):

Tran Ngoc Duyet ◽

Hiroki Ishikuro ◽

Makoto Takamiya ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Thin Film Silicon

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Experimental Investigation of Pattern Layout Effect on Radio-Frequency Performance of Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.5691 ◽

2007 ◽

Vol 46 (9A) ◽

pp. 5691-5694 ◽

Author(s):

Satoshi Matsumoto ◽

Masato Mino

Keyword(s):

Thin Film ◽

Experimental Investigation ◽

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Film Silicon

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Investigation on the Fully- and Partially-Depleted Thin-Film Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect-Transistors for High-Frequency Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6115 ◽

2000 ◽

Vol 39 (Part 1, No. 11) ◽

pp. 6115-6118 ◽

Author(s):

Satoshi Matsumoto ◽

Tatsuo Sakai ◽

Toshiaki Yachi

Keyword(s):

Thin Film ◽

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Film Silicon

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