Unconventional grain growth suppression in oxygen-rich metal oxide nanoribbons

Hyeuk Jin Han; Gyu Rac Lee; Yujun Xie; Hanhwi Jang; David J. Hynek; Eugene N. Cho; Ye Ji Kim; Yeon Sik Jung; Judy J. Cha

doi:10.1126/sciadv.abh2012

The Effect of Grain Growth Suppression on the Interface Population in Nimonic PE16

Materials Science Forum ◽

10.4028/www.scientific.net/msf.426-432.3557 ◽

2003 ◽

Vol 426-432 ◽

pp. 3557-3562 ◽

Cited By ~ 4

Author(s):

Valerie Randle

Keyword(s):

Grain Growth ◽

Growth Suppression

Grain growth suppression of ZTA by multi-step sintering

Materials Today Proceedings ◽

10.1016/j.matpr.2020.02.246 ◽

2020 ◽

Vol 26 ◽

pp. 1226-1230

Author(s):

Shaik Akbar Basha ◽

Debasish Sarkar

Keyword(s):

Grain Growth ◽

Growth Suppression

Grain Growth Suppression and Enhancement by Interdiffusion in Thin Films

MRS Proceedings ◽

10.1557/proc-343-33 ◽

1994 ◽

Vol 343 ◽

Cited By ~ 7

Author(s):

Alexander H. King ◽

Karen E. Harris

Keyword(s):

Thin Films ◽

Grain Growth ◽

Electrical Resistance ◽

Growth Suppression ◽

Grain Structure ◽

Growth Enhancement ◽

Metallic Films ◽

Fundamental Understanding ◽

Solute Atoms ◽

Almost All

ABSTRACTGrain structure and grain growth in thin metallic films are important because of their effects on properties such as yield strength, electrical resistance and electromigration resistance. Since almost all thin films are used in contact with a substrate and many also have contacts with overlayers, it is important to consider how interactions with other materials affect the grain growth process. In this paper we consider the effects of diffusive interactions. We will show that interdiffusion often accompanies grain growth and that it can result in a number of novel grain boundary reactions, driven by a variety of effects. Using TEM techniques, we demonstrate cases of grain growth suppression and grain growth enhancement resulting from interdiffusion of solute atoms in gold thin films. The reasons for the observed effects will be considered with a view to providing a fundamental understanding of the types of systems that might be expected to exhibit the various phenomena.

β-Si3N4 grain growth, part I: Effect of metal oxide sintering additives

Journal of the European Ceramic Society ◽

10.1016/s0955-2219(96)00237-3 ◽

1997 ◽

Vol 17 (11) ◽

pp. 1285-1299 ◽

Cited By ~ 33

Author(s):

H. Björklund ◽

L.K.L. Falk ◽

K. Rundgren ◽

J. Wasén

Keyword(s):

Metal Oxide ◽

Grain Growth ◽

Sintering Additives

Self-Limited to Parabolic Grain Growth Kinetics in Metal Oxide Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.715-716.333 ◽

2012 ◽

Vol 715-716 ◽

pp. 333-333

Author(s):

Jennifer L.M. Rupp ◽

Barbara Scherrer ◽

Julia Martynczuk ◽

Ludwig J. Gauckler

Keyword(s):

Thin Films ◽

Metal Oxide ◽

Grain Growth ◽

Growth Kinetics ◽

Deposition Temperature ◽

Crystalline State ◽

Oxide Thin Film ◽

Processing Route ◽

Interface Diffusion ◽

Grain Growth Kinetics

Distinctive microstructure engineering of amorphous to nanocrystalline electroceramic thin films is of high relevance for integration in low to high temperature operating MEMS-devices. Up to now, kinetic rules of nucleation, crystallization and grain growth of precipitation-based ceramic thin films are unknown. In this study, general rules for the crystallization and grain growth kinetics of a pure single-phase metal oxide thin film with only one kind of cation, i.e. ceria, made by spray pyrolysis from a precursor with one single organic solvent is discussed [1,. The near-and long range disorder is studied via Raman, DSC investigation of crystallization enthalpy, XRD, SEM and TEM for amorphous to fully crystalline state. These 400 nm thick-thin films were dense, crack-free and amorphous directly after deposition on a sapphire substrate. Briefly, above deposition temperature crystallization sets in with respect to temperature and persists over a broad temperature range from 400 to 950°C. In this regime, biphasic amorphous-crystallien films exist and grain growth proceeds simultaneously to crystallization. Isothermal grain growth studies showed that after short dwell times of 10-20h stable microstructures established following self-limited grain growth law [. In this state, driving force for the crystallization is the reduction of free enthalpy for phase transformation and interface diffusion prevails. A transition to classical grain curvature-driven parabolic grain growth kinetics appeared once the material reached the fully crystalline state for average grain sizes larger than 140 nm and higher annealing temperatures. Volume diffusion was then activated in addition to the interface diffusion. It was found that once crystallized the material shows independent on processing route equal XRD density and microstrain, as well as Raman characteristics. However, dependent on processing conditions i.e. choice of organic and, according, deposition temperature of the film amorphous states vary and affect strongly crystallization and grain growth history for the biphasic films.

Grain growth suppression in alumina via doping and two-step sintering

Ceramics International ◽

10.1016/j.ceramint.2015.05.162 ◽

2015 ◽

Vol 41 (9) ◽

pp. 11975-11983 ◽

Cited By ~ 23

Author(s):

Katarína Bodišová ◽

Dušan Galusek ◽

Peter Švančárek ◽

Václav Pouchlý ◽

Karel Maca

Keyword(s):

Grain Growth ◽

Growth Suppression

Grain growth suppression in nanocrystalline materials

Materials Letters ◽

10.1016/j.matlet.2013.03.035 ◽

2013 ◽

Vol 100 ◽

pp. 271-273 ◽

Cited By ~ 15

Author(s):

Vladimir Yu. Novikov

Keyword(s):

Grain Growth ◽

Nanocrystalline Materials ◽

Growth Suppression

Existence of Cubic ZrO2 at 300°C on Bulk Zirconium

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100062749 ◽

1969 ◽

Vol 27 ◽

pp. 166-167

Author(s):

R.A. Ploc

Keyword(s):

Metal Oxide ◽

Metal Substrate ◽

Preferred Orientation ◽

Monoclinic Zirconia ◽

Epitaxial Relationship

The manner in which ZrO2 forms on zirconium at 300°C in air has been discussed in the first reference. In short, monoclinic zirconia nucleates and grows with a preferred orientation relative to the metal substrate. The mode of growth is not well understood since an epitaxial relationship which gives minimum misfit between the zirconium ions in the metal/oxide combination is not realized. The reason may be associated with a thin cubic or tetragonal layer of ZrO2 between the inner oxygen saturated metal and the outer monoclinic zirconia.

Grain Refinement in Titanium-Erbium Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100052626 ◽

1974 ◽

Vol 32 ◽

pp. 522-523

Author(s):

B. B. Rath ◽

J. E. O'Neal ◽

R. J. Lederich

Keyword(s):

Electron Microscopy ◽

Size Distribution ◽

Grain Refinement ◽

Grain Growth ◽

Volume Fraction ◽

Pure Titanium ◽

Systematic Investigation ◽

Second Phase ◽

Titanium Matrix ◽

Average Size

Addition of small amounts of erbium has a profound effect on recrystallization and grain growth in titanium. Erbium, because of its negligible solubility in titanium, precipitates in the titanium matrix as a finely dispersed second phase. The presence of this phase, depending on its average size, distribution, and volume fraction in titanium, strongly inhibits the migration of grain boundaries during recrystallization and grain growth, and thus produces ultimate grains of sub-micrometer dimensions. A systematic investigation has been conducted to study the isothermal grain growth in electrolytically pure titanium and titanium-erbium alloys (Er concentration ranging from 0-0.3 at.%) over the temperature range of 450 to 850°C by electron microscopy.

Microstructural characterization of a rapidly solidified Al-Fe-V-Si alloy for elevated temperature applications

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104819 ◽

1988 ◽

Vol 46 ◽

pp. 550-551

Author(s):

R. E. Franck ◽

J. A. Hawk ◽

G. J. Shiflet

Keyword(s):

High Temperature ◽

Elevated Temperature ◽

Grain Growth ◽

Volume Fraction ◽

Microstructural Characterization ◽

Second Phase ◽

Microstructural Stability ◽

Elevated Temperature Strength ◽

Temperature Applications

Rapid solidification processing (RSP) is one method of producing high strength aluminum alloys for elevated temperature applications. Allied-Signal, Inc. has produced an Al-12.4 Fe-1.2 V-2.3 Si (composition in wt pct) alloy which possesses good microstructural stability up to 425°C. This alloy contains a high volume fraction (37 v/o) of fine nearly spherical, α-Al12(Fe, V)3Si dispersoids. The improved elevated temperature strength and stability of this alloy is due to the slower dispersoid coarsening rate of the silicide particles. Additionally, the high v/o of second phase particles should inhibit recrystallization and grain growth, and thus reduce any loss in strength due to long term, high temperature annealing.The focus of this research is to investigate microstructural changes induced by long term, high temperature static annealing heat-treatments. Annealing treatments for up to 1000 hours were carried out on this alloy at 500°C, 550°C and 600°C. Particle coarsening and/or recrystallization and grain growth would be accelerated in these temperature regimes.