The temperature coefficients of delay of surface acoustic waves in LGS and LGN crystals in a wide temperature range

Abstract (1) The temperature coefficient of vulcanization to a standard modulus is 2.0 in the presence of mercaptobenzothiazole, Ureka, Ureka White, and Vulcafor D. A. (2) The temperature coefficients of vulcanization in the presence of all accelerators tested, including those of delayed action type, are constant over a wide temperature range (110–150° C). None of the accelerators appears to have a critical temperature. (3) Differences between the rates at which modulus develops with accelerators of similar activity may account for the fact that some induce scorching on the compounding mill, whereas others do not. (4) At all temperatures investigated, the period of delay of a delayed action accelerator may represent a constant proportion of the total time required to reach a definite state of cure, as indicated by modulus.

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Thin Film Integrated RC-Networks With Compensated Temperature Coefficients of R and C

ElectroComponent Science and Technology ◽

10.1155/apec.4.139 ◽

1977 ◽

Vol 4 (3-4) ◽

pp. 139-142 ◽

Cited By ~ 2

Author(s):

H. W. Pötzlberger

Keyword(s):

Thin Film ◽

Dielectric Loss ◽

Temperature Coefficient ◽

Wide Temperature Range ◽

Temperature Compensation ◽

Capacitance Density ◽

Temperature Range ◽

Temperature Coefficients ◽

Capacitor Structure ◽

Rc Networks

Thin film integrated RC-networks can be prepared from two non reactively sputtered TaAl films, the properties and optimum compositions of which have been found. Temperature compensation of the integrated resistors and capacitors is achieved by adjusting the temperature coefficient of capacitance. A duplex dielectric capacitor structure is used with anodically formed TaAl-oxide and a sputtered SiO2layer. Temperature coefficient of capacitance, dielectric loss and capacitance density have been measured vs. SiO2thickness. Because of almost linear dependences on temperature of both the TaAl resistors and the TaAl-oxide/SiO2-capacitors, such RC-networks show temperature compensation over a wide temperature range, the TCC being +110 ppm/K and the TCR −110 ppm/K.

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Characterization of RF Sputtered ZnO Piezoelectric Films Using Transmission Electron Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100114050 ◽

1975 ◽

Vol 33 ◽

pp. 86-87

Author(s):

Kemining W. Yeh ◽

Richard S. Muller ◽

Wei-Kuo Wu ◽

Jack Washburn

Keyword(s):

Integrated Circuit ◽

Acoustic Waves ◽

New Technology ◽

Surface Acoustic Waves ◽

Electromechanical Properties ◽

Leading Role ◽

Saw Devices ◽

Transmission Electron ◽

High Degree

Considerable and continuing interest has been shown in the thin film transducer fabrication for surface acoustic waves (SAW) in the past few years. Due to the high degree of miniaturization, compatibility with silicon integrated circuit technology, simplicity and ease of design, this new technology has played an important role in the design of new devices for communications and signal processing. Among the commonly used piezoelectric thin films, ZnO generally yields superior electromechanical properties and is expected to play a leading role in the development of SAW devices.

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