scholarly journals Thin Film Integrated RC-Networks With Compensated Temperature Coefficients of R and C

1977 ◽  
Vol 4 (3-4) ◽  
pp. 139-142 ◽  
Author(s):  
H. W. Pötzlberger
Keyword(s):  
Thin Film ◽  
Dielectric Loss ◽  
Temperature Coefficient ◽  
Wide Temperature Range ◽  
Temperature Compensation ◽  
Capacitance Density ◽  
Temperature Range ◽  
Temperature Coefficients ◽  
Capacitor Structure ◽  
Rc Networks

Thin film integrated RC-networks can be prepared from two non reactively sputtered TaAl films, the properties and optimum compositions of which have been found. Temperature compensation of the integrated resistors and capacitors is achieved by adjusting the temperature coefficient of capacitance. A duplex dielectric capacitor structure is used with anodically formed TaAl-oxide and a sputtered SiO2layer. Temperature coefficient of capacitance, dielectric loss and capacitance density have been measured vs. SiO2thickness. Because of almost linear dependences on temperature of both the TaAl resistors and the TaAl-oxide/SiO2-capacitors, such RC-networks show temperature compensation over a wide temperature range, the TCC being +110 ppm/K and the TCR −110 ppm/K.

The Effect of Organic Accelerators on the Temperature Coefficient of Vulcanization

1938 ◽  
Vol 11 (1) ◽  
pp. 101-106 ◽  
Author(s):  
K. W. Eliel
Keyword(s):  
Critical Temperature ◽  
Temperature Coefficient ◽  
Wide Temperature Range ◽  
Similar Activity ◽  
Temperature Range ◽  
Temperature Coefficients ◽  
Constant Proportion ◽  
Action Type ◽  
Delayed Action ◽  
Time Required

Abstract (1) The temperature coefficient of vulcanization to a standard modulus is 2.0 in the presence of mercaptobenzothiazole, Ureka, Ureka White, and Vulcafor D. A. (2) The temperature coefficients of vulcanization in the presence of all accelerators tested, including those of delayed action type, are constant over a wide temperature range (110–150° C). None of the accelerators appears to have a critical temperature. (3) Differences between the rates at which modulus develops with accelerators of similar activity may account for the fact that some induce scorching on the compounding mill, whereas others do not. (4) At all temperatures investigated, the period of delay of a delayed action accelerator may represent a constant proportion of the total time required to reach a definite state of cure, as indicated by modulus.

Target Crystallography and the Growth of Pb(Mg1/3Nb2/3)O3 (PMN) Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
M.H. Corbett ◽  
G. Catalan ◽  
J.M. Gregg ◽  
R.M. Bowman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Wide Temperature Range ◽  
Pulsed Laser ◽  
Lead Magnesium Niobate ◽  
Laser Deposition ◽  
Film Capacitor ◽  
Lead Magnesium

AbstractLead magnesium niobate thin films have been grown on {100} MgO substrates using pulsed laser deposition (PLD). Several series of films were made using targets of varying perovskite and PbO content. The conditions necessary to produce almost 100% perovskite Pb(Mg1/3Nb2/3)O3 (PMN) films were most sensitive to the growth temperature rather than the starting target crystallography. The electrical properties were determined by fabricating planar thin film capacitor structures and monitoring capacitance and dielectric loss as a function of temperature. Our best capacitors yielded a loss of 0.1 at 1 kHz over a wide temperature range.

Polymer hybrid thin films based on rare earth ion-functionalized MOF: photoluminescence tuning and sensing as a thermometer

2015 ◽  
Vol 44 (4) ◽  
pp. 1875-1881 ◽  
Author(s):  
Xiang Shen ◽  
Bing Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rare Earth ◽  
Wide Temperature Range ◽  
Rare Earth Ion ◽  
Temperature Range ◽  
Polymer Hybrid ◽  
Hybrid Thin Films

A series of photofunctional polymer hybrid thin films based on rare earth ion-functionalized MOFs have been synthesized and can display multi-colors (red, blue, blue-green and white). Interestingly, Tb0.999Eu0.001-2 thin film can be used as ratiometric luminescent thermometer in a wide temperature range.

Thin-film contact systems for thermocouples operating in a wide temperature range

2021 ◽  
Vol 852 ◽  
pp. 156889
Author(s):  
Maxim Shtern ◽  
Maxim Rogachev ◽  
Yury Shtern ◽  
Dmitry Gromov ◽  
Alexander Kozlov ◽  
...  
Keyword(s):  
Thin Film ◽  
Wide Temperature Range ◽  
Temperature Range

PRECISING COMPLEX-COMPENSATED CURRENT REFERENCE BASED ON DIFFERENTIAL MODE OF CURRENTS

2012 ◽  
Vol 21 (07) ◽  
pp. 1250059 ◽  
Author(s):  
L. F. SHI ◽  
Y. ZHAO ◽  
W. G. JIA ◽  
L. Y. CHENG ◽  
X. Q. LAI
Keyword(s):  
Temperature Coefficient ◽  
Temperature Compensation ◽  
Negative Temperature Coefficient ◽  
Supply Voltage ◽  
Negative Temperature ◽  
Differential Mode ◽  
Temperature Coefficients ◽  
Current Reference ◽  
Nonlinear Temperature ◽  
A Current

A current reference with complex compensation using negative temperature coefficient of multiple currents is proposed. The principle of compensation is introduced in detail. This work generates two different compensated currents in the whole temperature range, which is different from the traditional curvature-compensated circuit. The compensation is achieved by using difference of the negative temperature coefficients. Piecewise curvature-compensation and higher order nonlinear temperature compensation are applied at the same time. The proposed circuit is simple and easy to implement. Results of simulation with HSPICE show that the achieved temperature coefficient is only 34.2 ppm/°C compared with 364 ppm/°C under 1 μm BCD process, which is unnecessary to compensate in the range of -25°C ∼ 125°C at 5 V supply voltage.

On the Performance of Thin-Film Lateral SOI PIN Diodes as Thermal Sensors in a Wide Temperature Range

2019 ◽  
Vol 23 (1) ◽  
pp. 397-404 ◽  
Author(s):  
Michelly De Souza ◽  
Bertrand Rue ◽  
Denis Flandre ◽  
Marcelo A. Pavanello
Keyword(s):  
Thin Film ◽  
Wide Temperature Range ◽  
Thermal Sensors ◽  
Pin Diodes ◽  
Temperature Range
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