Disorientation kinetics of the B 80 4 centers in single crystal silicon

2002 ◽  
Vol 94 (1) ◽  
pp. 84-93
Author(s):  
A. S. Kaminskii
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Kinetics Of

Kinetics of TiSi2 thin film formation at a single-crystal silicon surface by Ti ion irradiation

1993 ◽  
Vol 226 (2) ◽  
pp. 191-195
Author(s):  
E.I. Bogdanov ◽  
L.N. Larikov ◽  
E.A. Maximenko ◽  
V.I. Franchouk
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Silicon Surface ◽  
Ion Irradiation ◽  
Film Formation ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Thin Film Formation ◽  
Kinetics Of

scholarly journals Oxidation kinetics of single crystal silicon carbide using electron microscopy

2012 ◽  
Vol 120 (1401) ◽  
pp. 181-185 ◽  
Author(s):  
Bralee CHAYASOMBAT ◽  
Takeharu KATO ◽  
Tsukasa HIRAYAMA ◽  
Tomoharu TOKUNAGA ◽  
Katsuhiro SASAKI ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Single Crystal ◽  
Oxidation Kinetics ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Kinetics Of

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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