Metalorganic vapour phase epitaxy of GaAs/AlGaAs nanoheterostructures for a quantum cascade laser

The possibility of fabrication of 4.6 µm spectral range quantum-cascade laser heterostructures by molecular-beam epitaxy technique with non-selective overgrowth by the metalorganic vapour-phase epitaxy is shown. The active region of the laser was formed on the basis of a heteropair of In0.67Ga0.33As/In0.36Al0.64As solid alloys. The waveguide claddings are formed by indium phosphide. The results of surface defects inspection and X-ray diffraction analysis of quantum-cascade laser heterostructures allow to conclude that the structural quality of the heterostructures is high and the estimated value of the root mean square surface roughness does not exceed 0.7 nm. Lasers with four cleaved facets exhibit lasing at room temperature with a relatively low threshold current density of the order of 1 kA /cm2.

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Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE

Crystals ◽

10.3390/cryst9060305 ◽

2019 ◽

Vol 9 (6) ◽

pp. 305 ◽

Cited By ~ 2

Author(s):

Maxim A. Ladugin ◽

Irina V. Yarotskaya ◽

Timur A. Bagaev ◽

Konstantin Yu. Telegin ◽

Andrey Yu. Andreev ◽

...

Keyword(s):

Quantum Cascade Lasers ◽

Vapour Phase ◽

Vapour Phase Epitaxy ◽

Quantum Cascade ◽

Ultrathin Layers ◽

Metalorganic Vapour Phase Epitaxy ◽

Short Period ◽

Output Characteristics ◽

Cascade Lasers ◽

High Repeatability

AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new growth procedures is needed. This article summarizes our work on the metalorganic vapour-phase epitaxy (MOVPE) growth of AlGaAs/GaAs heterostructures for modern infrared devices. The growth approaches presented allow for the improved output characteristics of different emitting devices such as multi active region lasers, epitaxially integrated via highly doped tunnel junctions (emission wavelength λ ~ 1 μm), quantum cascade lasers (λ ~10 μm) and THz laser (λ ~100 μm), based on short-period superlattice with 500–2000 layers.

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An 8-μm quantum cascade laserproduced by the metalorganic vapour phase epitaxy method

Quantum Electronics ◽

10.1070/qe2010v040n02abeh014282 ◽

2010 ◽

Vol 40 (2) ◽

pp. 95-97 ◽

Cited By ~ 5

Author(s):

I I Zasavitskii ◽

D A Pashkeev ◽

Aleksandr A Marmalyuk ◽

Yu L Ryaboshtan ◽

G T Mikaelyan

Keyword(s):

Vapour Phase ◽

Vapour Phase Epitaxy ◽

Quantum Cascade ◽

Metalorganic Vapour Phase Epitaxy

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Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171419 ◽

1994 ◽

Vol 52 ◽

pp. 736-737

Author(s):

A. Carlsson ◽

J.-O. Malm ◽

A. Gustafsson

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Quantum Wires ◽

Vapour Phase ◽

Quantitative Information ◽

Lattice Imaging ◽

Vapour Phase Epitaxy ◽

Metalorganic Vapour Phase Epitaxy ◽

High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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Towards practical applications of quantum emitters in boron nitride

Scientific Reports ◽

10.1038/s41598-021-93802-8 ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

M. Koperski ◽

K. Pakuła ◽

K. Nogajewski ◽

A. K. Dąbrowska ◽

M. Tokarczyk ◽

...

Keyword(s):

Optical Properties ◽

Boron Nitride ◽

Vapour Phase ◽

Emission Characteristics ◽

Vapour Phase Epitaxy ◽

Practical Applications ◽

Metalorganic Vapour Phase Epitaxy ◽

Polydimethylsiloxane Films ◽

Background Luminescence ◽

Quantum Emitters

AbstractWe demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into a variety of heterostructures and devices. First, the optical properties of polycrystalline BN films grown by metalorganic vapour-phase epitaxy are inspected. We observe that these specimens display an antibunching in the second-order correlation functions, if the broadband background luminescence is properly controlled. Furthermore, the feasibility to use flexible and transparent substrates to support hBN crystals that host quantum emitters is explored. We characterise hBN powders deposited onto polydimethylsiloxane films, which display quantum emission characteristics in ambient environmental conditions.

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