scholarly journals Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 305 ◽  
Author(s):  
Maxim A. Ladugin ◽  
Irina V. Yarotskaya ◽  
Timur A. Bagaev ◽  
Konstantin Yu. Telegin ◽  
Andrey Yu. Andreev ◽  
...  

AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new growth procedures is needed. This article summarizes our work on the metalorganic vapour-phase epitaxy (MOVPE) growth of AlGaAs/GaAs heterostructures for modern infrared devices. The growth approaches presented allow for the improved output characteristics of different emitting devices such as multi active region lasers, epitaxially integrated via highly doped tunnel junctions (emission wavelength λ ~ 1 μm), quantum cascade lasers (λ ~10 μm) and THz laser (λ ~100 μm), based on short-period superlattice with 500–2000 layers.

2007 ◽  
Vol 43 (23) ◽  
pp. 1284 ◽  
Author(s):  
J.A. Fan ◽  
M.A. Belkin ◽  
M. Troccoli ◽  
S. Corzine ◽  
D. Bour ◽  
...  

2005 ◽  
Vol 494 ◽  
pp. 25-30 ◽  
Author(s):  
A. Mirčetić ◽  
D. Indjin ◽  
V. Milanović ◽  
P. Harrison ◽  
Z. Ikonić ◽  
...  

In this paper a procedure for the global optimization of mid-infrared GaAs/AlGaAs quantum cascade lasers that relies on the method of simulated annealing is presented. We propose a double longitudinal optical phonon resonance design obtained via a ladder of three states, with subsequent pairs separated by optical phonon energy. Addition of an extra level decreases the lower laser level population by enabling an efficient extraction into the injector region. The output characteristics of the optimized structures are calculated using the full self–consistent rate equation model, which includes all of the relevant scattering mechanisms. We also presented the experimentally measured output characteristics of an initial device, which are in agreement with the numerically calculated values, confirming the good design capabilities of the applied procedure.


2021 ◽  
Vol 9 ◽  
Author(s):  
Lei Ge ◽  
Ning Yang ◽  
Jian Wang ◽  
Weidong Chu ◽  
Suqing Duan ◽  
...  

Self-mixing interference (SMI) in terahertz quantum cascade lasers (THz QCLs) is one of the significant approaches for coherent THz imaging and sensing techniques. Here, the output characteristics of SMI in distributed feedback (DFB) THz QCLs from the index-to the gain-coupling regimes are studied using the coupled wave theory and the multi-mode rate equation method. A mode hopping phenomenon is found to occur when the DFB coupling factor changes from index-coupling to gain-coupling, and the characteristics of the self-mixing signals of DFB-QCLs change greatly with this mode hopping. With the modulus of the coupling factor fixed and its argument varied from 0 to π/2, an extreme point of the self-mixing frequency and power signals of DFB-QCLs is found at π/9 due to the mode hopping. For index-coupling dominated DFB-QCLs, both the varying ranges of the self-mixing frequency signals and amplitudes of power signals increase with increasing DFB coupling factor argument. For gain-coupling dominated DFB-QCLs, with increasing argument value, the amplitude of the self-mixing power signal increases, but the varying range of the self-mixing frequency signal decreases. With the argument of the coupling factor fixed, we also found that the varying ranges of the self-mixing frequency signals decrease with increasing modulus for both index-coupling dominated and gain-coupling dominated DFB-QCLs. For index-coupling dominated DFB-QCLs, the amplitudes of the self-mixing power signals decrease with increasing modulus; however, the amplitudes of the self-mixing power signals of gain-coupling dominated DFB-QCLs increase. With the argument of the coupling factor fixed, for index-coupling dominated DFB-QCLs, we found that the varying ranges of the self-mixing frequency signals and amplitudes of power signals decrease with the increasing modulus. For gain-coupling dominated DFB-QCLs, with the coupling factor modulus increasing, the varying ranges of the self-mixing frequency signals decrease, however, the amplitudes of the self-mixing power signals increase. These results may help with the application of DFB-QCLs to self-mixing interferometers.


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Li Wang ◽  
Tsung-Tse Lin ◽  
Ke Wang ◽  
Thomas Grange ◽  
Stefan Birner ◽  
...  

2016 ◽  
Vol 24 (2) ◽  
Author(s):  
B. Ściana ◽  
M. Badura ◽  
W. Dawidowski ◽  
K. Bielak ◽  
D. Radziewicz ◽  
...  

AbstractThe work presents doping characteristics and properties of high Si−doped InGaAs epilayers lattice−matched to InP grown by low pressure metal−organic vapour phase epitaxy. Silane and disilane were used as dopant sources. The main task of investigations was to obtain heavily doped InGaAs epilayers suitable for usage as plasmon−confinement layers in the construction of mid−infrared InAlAs/InGaAs/InP quantum−cascade lasers (QCLs). It requires the doping concentration of 1×10


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