Influence of Temperature Profile on the Composition of Condensed Carbon in a Plasma Jet

ABSTRACTThe gas temperature of a radio-frequency thermal plasma has been measured by laser-induced fluorescence along the axis of the plasma jet near the substrate surface. The temperature was determined from the rotational population distribution of OH radicals. From the measured temperature profile, the freestream temperature was found to be about 3400 K and the boundary layer thickness was determined to be about 1 mm. A numerical model including carbonhydrogen- argon kinetics was used to predict species concentrations near the surface of the substrate. The results indicate that all CHa radical concentrations increase with freestream temperature for temperatures between 2500-4000 K. Of the C1 radicals, methyl has the highest concentration in this range in our system, which is consistent with other reports that methyl is an important diamond growth species.

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Comparison of High Field Characteristics of SiO2 and AIN Gate Insulators in 6H SiC MOS Capacitors

MRS Proceedings ◽

10.1557/proc-512-345 ◽

1998 ◽

Vol 512 ◽

Cited By ~ 2

Author(s):

V. P. Madangarli ◽

T. S. Sudarshan ◽

C. C. Tin

Keyword(s):

Silicon Dioxide ◽

Temperature Profile ◽

High Field ◽

Breakdown Strength ◽

Processing Conditions ◽

Mos Capacitors ◽

Influence Of Temperature ◽

Post Annealing ◽

Minute Post ◽

Thermally Grown

ABSTRACTUsing a fast ramp response technique, the high field characteristics, specifically the breakdown strength, of thermally grown silicon-dioxide (SiO2) and MOCVD grown aluminum-nitride (AIN), on n-type 6H-SiC epilayers is obtained as a function of three different processing conditions for the insulator growth. Significant improvement in the breakdown strength of thermally grown SiO2 after a 30 minute post annealing at 400°C in nitrogen ambient is reported. Further, the influence of temperature profile during the AIN growth on the breakdown strength is reported.

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Morphology of an Interface between Polyetherimide and Epoxy Prepreg

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.393-395.184 ◽

2011 ◽

Vol 393-395 ◽

pp. 184-188 ◽

Cited By ~ 9

Author(s):

Michael T. Heitzmann ◽

Meng Hou ◽

Martin Veidt ◽

Luigi Jules Vandi ◽

Rowan Paton

Keyword(s):

Atomic Force Microscopy ◽

Temperature Profile ◽

Interface Formation ◽

Influence Of Temperature ◽

Force Microscopy ◽

Cure Cycle ◽

Atomic Force ◽

Rapid Formation ◽

Temperature And Pressure

The morphology of the interface between a commercial epoxy prepreg resin (HexPly M18/1) and Polyetherimide (PEI) is studied. Different cure cycles prescribed by the supplier were investigated to determine the influence of temperature and pressure on interface formation. Atomic Force Microscopy (AFM) was used as the main means of investigation. A phase-separated interphase spanning 9-10μm was observed for the PEI/epoxy prepreg interface. It was found that the temperature profile of the cure cycle strongly influences the formation of this interphase. Rapid formation of these relatively large interphase areas suggests that mechanisms other than diffusion are responsible for this phenomenon.

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