CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS

2021 ◽  
Vol 62 (4) ◽  
pp. 630-640
Author(s):  
L. K. Orlov ◽  
V. I. Vdovin ◽  
Yu. N. Drozdov ◽  
M. L. Orlov ◽  
N. L. Ivina ◽  
...  
Author(s):  
E. López-Honorato ◽  
P. J. Meadows ◽  
J. Tan ◽  
Y. Xiang ◽  
P. Xiao

In this work we have deposited silicon carbide (SiC) at 1300°C with the addition of small amounts of propylene. The use of propylene and high concentrations of methyltrichlorosilane (9 vol %) allowed the deposition of superhard SiC coatings (42 GPa). The superhard SiC could result from the presence of a SiC–C solid solution, undetectable by X-ray diffraction but visible by Raman spectroscopy. Another sample obtained by the use of 50 vol % Argon, also showed the formation of SiC with good properties. The use of a flat substrate together with the particles showed the importance of carrying out the analysis on actual particles rather than in flat substrates. We show that it is possible to characterize the anisotropy of pyrolytic carbon by Raman spectroscopy.


2005 ◽  
Vol 20 (3) ◽  
pp. 254-258 ◽  
Author(s):  
S. N. Achary ◽  
A. K. Tyagi

A series of mixed fluoride compositions with PbF2 and ScF3 were prepared by heating the intimate mixtures of component fluorides at 600 °C for 10 h followed by slowly cooling to room temperature. The products obtained were analyzed by powder XRD to reveal the phases present in them and hence the low-temperature phase equilibria in the PbF2-ScF3 system. The phase equilibria show the fluorite-type solid solution up to the composition of about 15 mol% of ScF3 in the PbF2 lattice. The unit cell volume decreases with increasing ScF3 contents in the fluorite-type solid solutions. Beyond the solubility limit, the biphasic mixture of the cubic fluorite-type solid solution and leftover ScF3 is found to exist.


1997 ◽  
Vol 12 (12) ◽  
pp. 3206-3209 ◽  
Author(s):  
V. Oliveira ◽  
R. Vilar ◽  
O. Conde ◽  
P. Freitas

Al2O3−34 wt.% TiC ceramics have been machined with a KrF (248 nm) excimer laser under normal atmosphere. In the initial steps of the irradiation process both the roughness and the removal rate present a strong variation with the number of pulses. After approximately 200 pulses the process reaches a stationary regime where the roughness and the removal rate become constant. Characterization of the machined areas by scanning electron microscopy showed that the variations in roughness and removal rate are related to the evolution of the surface topography of the samples. Also, as a consequence of laser irradiation, TiC and Al2O3 are partially transformed into TiO2, TiC0.7N0.3, and an Al–Ti solid solution.


2017 ◽  
Vol 17 (4) ◽  
pp. 195-199 ◽  
Author(s):  
R. Mola ◽  
E. Stępień ◽  
M. Cieślik

AbstractThe modified surface layers of Mg enriched with Al and Si were fabricated by thermochemical treatment. The substrate material in contact with an Al + 20 wt.% Si powder mixture was heated to 445°C for 40 or 60 min. The microstructure of the layers was examined by OM and SEM. The chemical composition of the layer and the distribution of elements were determined by energy dispersive X-ray spectroscopy (EDS). The experimental results show that the thickness of the layer is dependent on the heating time. A much thicker layer (1 mm) was obtained when the heating time was 60 min than when it was 40 min (600 μm). Both layers had a non-homogeneous structure. In the area closest to the Mg substrate, a thin zone of a solid solution of Al in Mg was detected. It was followed by a eutectic with Mg17Al12and a solid solution of Al in Mg. The next zone was a eutectic with agglomerates of Mg2Si phase particles; this three-phase structure was the thickest. Finally, the area closest to the surface was characterized by dendrites of the Mg17Al12phase. The microhardness of the modified layer increased to 121-236 HV as compared with 33-35 HV reported for the Mg substrate.


2020 ◽  
Author(s):  
Isha S. Kapte ◽  
Sucharit Niyogi ◽  
Parvez J. Qureshi ◽  
C. Pavithra ◽  
W. Madhuri ◽  
...  

2019 ◽  
Vol 166 ◽  
pp. 96-101 ◽  
Author(s):  
Mo-Rigen He ◽  
Shuai Wang ◽  
Ke Jin ◽  
Hongbin Bei ◽  
Kazuhiro Yasuda ◽  
...  

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