Anisotropy of IR Absorption of an Ultrathin Water Layer on a Water/Quartz Glass Interface

2019 ◽  
Vol 127 (6) ◽  
pp. 1018-1022
Author(s):  
V. M. Zolotarev
Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1481
Author(s):  
Wenbo Li ◽  
Chenghao Xu ◽  
Ameng Xie ◽  
Ken Chen ◽  
Yingfei Yang ◽  
...  

Interfacial reaction between quartz and potassium silicate glass was studied at both 900 °C and 1000 °C. The results showed that no phase transformation was observed for the pure quartz at 900 °C or 1000 °C. Instead, for quartz particles in K2O-SiO2 glass, the transformation from quartz to cristobalite occurred at the quartz/glass interface at first, and then the cristobalite crystals transformed into tridymite. The tridymite formed at the interface between particles and glass became the site of heterogeneous nucleation, which induces plenty of tridymite precipitation in potassium silicate glass. The influential mechanism of firing temperature and size of quartz particles on transformation rate was discussed.


2020 ◽  
Vol 92 (2) ◽  
pp. 20101
Author(s):  
Behnam Kheyraddini Mousavi ◽  
Morteza Rezaei Talarposhti ◽  
Farshid Karbassian ◽  
Arash Kheyraddini Mousavi

Metal-assisted chemical etching (MACE) is applied for fabrication of silicon nanowires (SiNWs). We have shown the effect of amorphous sheath of SiNWs by treating the nanowires with SF6 and the resulting reduction of absorption bandwidth, i.e. making SiNWs semi-transparent in near-infrared (IR). For the first time, by treating the fabricated SiNWs with copper containing HF∕H2O2∕H2O solution, we have generated crystalline nanowires with broader light absorption spectrum, up to λ = 1 μm. Both the absorption and photo-luminescence (PL) of the SiNWs are observed from visible to IR wavelengths. It is found that the SiNWs have PL at visible and near Infrared wavelengths, which may infer presence of mechanisms such as forbidden gap transitions other can involvement of plasmonic resonances. Non-radiative recombination of excitons is one of the reasons behind absorption of SiNWs. Also, on the dielectric metal interface, the absorption mechanism can be due to plasmonic dissipation or plasmon-assisted generation of excitons in the indirect band-gap material. Comparison between nanowires with and without metallic nanoparticles has revealed the effect of nanoparticles on absorption enhancement. The broader near IR absorption, paves the way for applications like hyperthermia of cancer while the optical transition in near IR also facilitates harvesting electromagnetic energy at a broad spectrum from visible to IR.


2018 ◽  
pp. 68-72
Author(s):  
Yu. K. Taranenko ◽  
O. Yu. Oliynyk ◽  
N. A. Minakova ◽  
E. V. Titova

2002 ◽  
Vol 715 ◽  
Author(s):  
Keda Wang ◽  
Haoyue Zhang ◽  
Jian Zhang ◽  
Jessica M. Owens ◽  
Jennifer Weinberg-Wolf ◽  
...  

Abstracta-Si:H films were prepared by hot wire chemical vapor deposition. One group was deposited at a substrate temperature of Ts=250°C with varied hydrogen-dilution ratio, 0<R<10; the other group was deposited with fixed R=3 but a varied Ts from 150 to 550°C. IR, Raman and PL spectra were studied. The Raman results indicate that there is a threshold value for the microstructure transition from a- to μc-Si. The threshold is found to be R ≈ 2 at Ts = 250°C and Ts ≈ 200°C at R=3. The IR absorption of Si-H at 640 cm-1 was used to calculate the hydrogen content, CH. CH decreased monotonically when either R or Ts increased. The Si-H stretching mode contains two peaks at 2000 and 2090 cm-1. The ratio of the integral absorption peaks I2090/(I2090+I2090) showed a sudden increase at the threshold of microcrystallinity. At the same threshold, the PL features also indicate a sudden change from a- to μc-Si., i.e. the low energy PL band becomes dominant and the PL total intensity decreases. We attribute the above IR and PL changes to the contribution of microcrystallinity, especially the c-Si gain-boundaries.


2008 ◽  
Author(s):  
Wei Guo ◽  
Zeng Bo Wang ◽  
Lin Li ◽  
Zhu Liu ◽  
Boris Luk’yanchuk ◽  
...  

Author(s):  
Tino Petsch ◽  
Bernd Keiper ◽  
Günter Reiße ◽  
Steffen Weißmantel ◽  
Robby Ebert ◽  
...  

2018 ◽  
Vol 10 (4) ◽  
pp. 134-144 ◽  
Author(s):  
Yu.N. Dubnishchev ◽  
V.A. Arbuzov ◽  
E.V. Arbuzov ◽  
V.S. Berdnikov ◽  
S.A. Kislytsin ◽  
...  

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