Sapphire Single-Crystal Waveguides and Fibers for Thz Frequency Range

Author(s):  
G. M. Katyba ◽  
I. N. Dolganova ◽  
K. I. Zaytsev ◽  
V. N. Kulrov
Rare Metals ◽  
2006 ◽  
Vol 25 (6) ◽  
pp. 260-266 ◽  
Author(s):  
J LI ◽  
X SU ◽  
M NA ◽  
H YANG ◽  
J LI ◽  
...  

Optik ◽  
2014 ◽  
Vol 125 (3) ◽  
pp. 1465-1468 ◽  
Author(s):  
Rui Ke ◽  
Yumin Zhang ◽  
Yufeng Zhou ◽  
Zhongwei Yin

1999 ◽  
Vol 14 (8) ◽  
pp. 3312-3318 ◽  
Author(s):  
P. Kumar ◽  
S. A. Dregia ◽  
K. H. Sandhage

The types and structures of oxide phases produced during the incongruent reduction of sapphire (single-crystal Al2O3) by molten magnesium were examined. Polished faces of sapphire were exposed to molten magnesium at 1000 °C for 100 h. Such exposure resulted in the formation of a continuous, epitaxial layer of spinel (MgAl2O4) on sapphire and a continuous, epitaxial layer of magnesia (MgO) on the spinel. X-ray pole figure analyses indicated that two variants of spinel and magnesia had formed in a manner consistent with the following orientation relationships:


2014 ◽  
Vol 924 ◽  
pp. 275-280
Author(s):  
Rui Ke ◽  
Yu Min Zhang ◽  
Yu Feng Zhou

Sapphire single crystal is widely used in many fields because of its excellent properties, as a focus of mechanical test, nanoindentation on sapphire is paid a great deal of attention by researchers. In this manuscript, the maximum load, depth and loading rate effects on the first pop-in event during nanoindentation of sapphire single crystal were discussed, the results indicated that these factors had no effect on the load at which the first pop-in occurred and the extension width of pop-in; the deformation below the first pop-in event was discussed and it could be roughly considered as purely elastic deformation through analyzing.


2010 ◽  
Vol 10 (3) ◽  
pp. S499-S501 ◽  
Author(s):  
Yuichi Sato ◽  
Hirotoshi Hatori ◽  
Suguru Igarashi ◽  
Manabu Arai ◽  
Kazuki Ito ◽  
...  

2010 ◽  
Vol 638-642 ◽  
pp. 2909-2914 ◽  
Author(s):  
Yuichi Sato ◽  
Tatsushi Kodate ◽  
Manabu Arai

Thin films of CdTe semiconductors were prepared on sapphire single crystal and quartz glass substrates by a vacuum evaporation method. Crystallinity and photoluminescence properties of the obtained CdTe thin films on the substrates were semi-quantitatively compared concerning the difference of the substrate materials. Dependences of the properties on the substrate temperature in the preparations and indium doping to the thin films were also investigated.


2009 ◽  
Vol 421-422 ◽  
pp. 419-422
Author(s):  
Ghulam Shabbir ◽  
Seiji Kojima

The electrical properties of [001]-oriented morphotropic phase boundary (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-33%PT) single crystal have investigated as a function of temperature and frequency. The ac-conductivity exhibited continuous dispersion at all temperatures and frequency range examined and was associated to the thermally activated space charge carriers and local off-centering of Ti4+ and Pb2+ ions. The variations in ferroelectric phase transition temperatures observed in the poled state were associated to the polarization fluctuations and phase co-existence.


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