Epitaxial growth of magnesia and spinel on sapphire during incongruent reduction in molten magnesium

1999 ◽  
Vol 14 (8) ◽  
pp. 3312-3318 ◽  
Author(s):  
P. Kumar ◽  
S. A. Dregia ◽  
K. H. Sandhage
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Pole Figure ◽  
Epitaxial Layer ◽  
Orientation Relationships ◽  
X Ray ◽  
Oxide Phases ◽  
Sapphire Single Crystal ◽  
Molten Magnesium

The types and structures of oxide phases produced during the incongruent reduction of sapphire (single-crystal Al2O3) by molten magnesium were examined. Polished faces of sapphire were exposed to molten magnesium at 1000 °C for 100 h. Such exposure resulted in the formation of a continuous, epitaxial layer of spinel (MgAl2O4) on sapphire and a continuous, epitaxial layer of magnesia (MgO) on the spinel. X-ray pole figure analyses indicated that two variants of spinel and magnesia had formed in a manner consistent with the following orientation relationships:

Pulsed Laser Deposition of Epitaxial LiNbO3 Films on Sapphire Substrates Using a Single Crystal Targets

1994 ◽  
Vol 361 ◽  
Author(s):  
See-Hyung Lee ◽  
Tae W. Noh ◽  
Jai-Hyung Lee ◽  
Young-Gi Kim
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pole Figure ◽  
Oxygen Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Sapphire Substrates ◽  
Crystallographic Orientations

ABSTRACTPulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

Study of uniaxial deformation behavior of 50 nm-thick thin film of gold single crystal using in situ X-ray pole figure measurements

2019 ◽  
Vol 377 ◽  
pp. 124878
Author(s):  
J. Drieu La Rochelle ◽  
P. Godard ◽  
C. Mocuta ◽  
D. Thiaudière ◽  
J. Nicolai ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Pole Figure ◽  
Deformation Behavior ◽  
Uniaxial Deformation ◽  
X Ray

Epitaxial Growth of MgO Single Crystal Thin Film in Oxygen Atmosphere

1992 ◽  
Vol 279 ◽  
Author(s):  
M. H. Yang ◽  
C. P. Flynn
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Bulk Diffusion ◽  
Oxygen Atmosphere ◽  
Mass Action ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffusion Studies ◽  
Mgo Substrate

ABSTRACTWe have studied the epitaxial growth of MgO single crystal thin films by depositing Mg onto MgO substrates in an oxygen atmosphere. This method provides a simple way to dope Mg18O layers uniformly into Mg16O. The well controlled layer thicknesses are suitable for bulk diffusion studies both in the MgO epilayer and the MgO substrate. The MgO growth rate was measured and found to be proportional to the Mg flux and to the square root of oxygen pressure at a given temperature, obeying the law of mass action. High quality MgO single crystal thin films, as indicated by RHEED and x-ray diffraction, were found to grow over u wide temperature range, as in the earlier work1 using e-beam evaporation.

Superlattice formation in the lithiated vanadium oxide phases Li0.67V6O13 and LiV6O13

2001 ◽  
Vol 57 (6) ◽  
pp. 759-765 ◽  
Author(s):  
Helen Björk ◽  
Sven Lidin ◽  
Torbjörn Gustafsson ◽  
John O. Thomas
Keyword(s):  
Single Crystal ◽  
Unit Cell ◽  
Double Layers ◽  
Li Ion Battery ◽  
X Ray Diffraction ◽  
Lithium Ions ◽  
X Ray ◽  
Electrochemical Lithiation ◽  
Oxide Phases ◽  
Li Ion

Two new lithiated phases of V6O13 were formed by carefully tuning the temperature of electrochemical lithiation in a `coffee-bag' type Li-ion battery at 2.78 V versus Li/Li+. These were studied by single-crystal X-ray diffraction. A phase with the composition Li2/3V6O13 was obtained at 308 K with a unit cell three times the volume of the original V6O13 cell. A single crystal discharged at ambient temperature was shown to be LiV6O13 and twice the unit-cell volume of the original V6O13 cell. On lithiation, the structures retain their basic V6O13 structure of alternating single and double layers of VO6 octahedra. The lithium ions occupy chemically equivalent sites, where they coordinate fivefold to O atoms, and associate with the single layers of VO6 octahedra. The insertion of lithium causes a significant elongation of one of the V—O bonds in each structure, which expands from 1.65 to 1.89 Å; this is due to the charge reduction of a specific V atom.

Epitaxial Growth of CaxSr1−xF2 Layers on CaF2 by Vacuum Evaporation

1985 ◽  
Vol 54 ◽  
Author(s):  
Nicholas G. Norton ◽  
K. S. Knight
Keyword(s):  
Single Crystal ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Single Phase ◽  
Epitaxial Films ◽  
Mixed Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vegard’S Law ◽  
Substrate Temperatures

ABSTRACTThe evaporation and epitaxial growth on single crystal CaF2 substrates of CaF2/SrF2 mixtures are investigated. The evaporated films are studied with X-ray diffraction and optical microscopy.X-ray diffraction results show that the evaporation of yCaF2 + (1 - y)SrF2 mixtures from a single boat, with y in the range 0 to 1, result in single phase, mixed crystals of composition CaxSr1−xF2. If Vegard's law is assumed to apply it is found experimentally that the film composition is the same as that of the source.For the evaporation of CaF2 and SrF2 onto cleaved CaF2 crystals it is shown that the best quality epitaxial films are obtained at substrate temperatures of∼400°C. At temperatures <400°C there is some broadening of the X-ray diffraction spots from the overlayer compared with those from the substrate. At temperatures>400°C there is a tendency for the epitaxial films to delaminate from the substrate.

Influence of the Nitridation Time after the Al Pre-Seeded Layer on the Properties of GaN Layer Grown on Si (1 1 1)

2014 ◽  
Vol 887-888 ◽  
pp. 446-449
Author(s):  
Dong Guo Zhang ◽  
Zhong Hui Li ◽  
Da Qing Peng ◽  
Xun Dong
Keyword(s):  
High Resolution ◽  
Aluminum Nitride ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Critical Value ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nitridation Time ◽  
The One

The epitaxial growth of Gallium Nitride (GaN) on 2 inch Si (1 1 1) substrates was investigated, and it was found that by inserting a surface nitridation layer prior to Aluminum Nitride (AlN) nucleation upon substrate, the discoid defects and cracks on the surface were suppressed. Furthermore, compared with the GaN epitaxial layer grown without nitridation, the one with a 30 sec. nitridation layer showed a twice brighter integrated photoluminescence (PL) spectra intensity and a (0 0 2) High-resolution X-ray diffraction (HRXRD) curve width of 13.6 arcminute. The crystalline quality of GaN epitaxial layer became worse when the nitridation time exceeded a critical value, and even more cracks appeared on the surface although no discoid defect appeared anymore.

X-ray pole-figure study of the epitaxial growth of C60 thin films on mica (001)

1995 ◽  
Vol 60 (4) ◽  
pp. 383-389 ◽  
Author(s):  
S. Henke ◽  
K. H. Th�rer ◽  
S. Geier ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Pole Figure ◽  
X Ray

Single crystal CrN/ScN superlattice soft X-ray mirrors: Epitaxial growth, structure, and properties

2006 ◽  
Vol 514 (1-2) ◽  
pp. 10-19 ◽  
Author(s):  
J. Birch ◽  
T. Joelsson ◽  
F. Eriksson ◽  
N. Ghafoor ◽  
L. Hultman
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Structure And Properties ◽  
X Ray ◽  
Growth Structure

scholarly journals Photo-Diodes Based on CH3NH3PbCl3 Perovskite Single Crystals by Epitaxial Growth for Ultraviolet Photo-Detection

2021 ◽  
Vol 9 ◽  
Author(s):  
Jingda Zhao ◽  
Xin Wang ◽  
Yuzhu Pan ◽  
Yubing Xu ◽  
Yuwei Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Single Crystals ◽  
Epitaxial Layer ◽  
Wide Band ◽  
Uv Detection ◽  
Single Crystal Substrate ◽  
Wide Band Gap ◽  
Crystal Substrate ◽  
Photo Detection

Organic-inorganic hybrid methylammonium lead halide perovskite MAPbX3 (where MA = CH3NH3, and X = Cl, Br, I) single crystals are potential semiconductors for photo-detection due to their excellent optoelectronic performance. In particular, MAPbCl3 single crystal is a wide-band-gap (2.9 eV) semiconductor which is suitable for ultraviolet (UV) detection. In this work, n−-n+ photo-diodes are fabricated through solution-processed epitaxial growth, growing Bi-doped MAPbCl3 epitaxial layer on MAPbCl3 single crystal substrate. The epitaxial layer effectively improves the interface between n−-type and n+-type layers and leads to low dark current. This work provides useful information for UV detection based on perovskites.

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