Resonant tunneling transport through GaAs/AlGaAs superlattices in strong tilted magnetic field

2006 ◽  
Vol 103 (3) ◽  
pp. 428-435 ◽  
Author(s):  
M. P. Telenkov ◽  
Yu. A. Mityagin
2007 ◽  
Vol 21 (08n09) ◽  
pp. 1594-1599 ◽  
Author(s):  
M. P. TELENKOV ◽  
YU. A. MITYAGIN

The transverse resonant tunneling transport and electric field domain formation in GaAs/AlGaAs superlattices were investigated in a strong tilted magnetic field. The magnetic field component parallel to structure layers causes intensive tunneling transition between Landau levels with Δn≠0, resulting in the considerable "inhomogeneous" broadening of intersubband tunneling resonance as well as in the shift of the resonance toward higher electric fields. This leads to noticeable changes of the I-V characteristics of the superlattice, namely to smoothing of the periodic NDC structure on plateau-like regions caused by formation of the electric field domains and to the shift of the plateaus toward the higher applied voltage. The predicted behavior of the I-V characteristics of the structures in magnetic field was found experimentally.


1991 ◽  
Vol 44 (24) ◽  
pp. 13795-13798 ◽  
Author(s):  
Y. Galvao Gobato ◽  
J. M. Berroir ◽  
Y. Guldner ◽  
J. P. Vieren ◽  
F. Chevoir ◽  
...  

1995 ◽  
Vol 67 (12) ◽  
pp. 1775-1777 ◽  
Author(s):  
Regina Dömel ◽  
C. Horstmann ◽  
M. Siegel ◽  
A. I. Braginski ◽  
M. Yu. Kupriyanov

2010 ◽  
Vol 22 (9) ◽  
pp. 095701 ◽  
Author(s):  
M I Tsindlekht ◽  
V M Genkin ◽  
G I Leviev ◽  
N Yu Shitsevalova

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