Raman spectroscopy of isotopically pure (12C, 13C) and isotopically mixed (12.5C) diamond single crystals at ultrahigh pressures

2016 ◽  
Vol 123 (3) ◽  
pp. 443-451 ◽  
Author(s):  
P. V. Enkovich ◽  
V. V. Brazhkin ◽  
S. G. Lyapin ◽  
A. P. Novikov ◽  
H. Kanda ◽  
...  
Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.


2016 ◽  
Vol 89 (7-8) ◽  
pp. 768-776 ◽  
Author(s):  
Irena Jankowska-Sumara ◽  
Min-Seok Jeong ◽  
Jae-Hyeon Ko ◽  
Andrzej Majchrowski ◽  
Józef Żmija

2003 ◽  
Vol 795 ◽  
Author(s):  
Jae-il Jang ◽  
Songqing Wen ◽  
M. J. Lance ◽  
I. M. Anderson ◽  
G. M. Pharr

ABSTRACTNanoindentation experiments were performed on single crystals of (100) Si using a series of triangular pyramidal indenters with centerline-to-face angles in the range 35.3° to 85.0°. The influences of the indenter geometry on cracking and phase transformation during indentation were systematically studied. Although reducing the indenter angle reduces the threshold load for cracking and increases the crack lengths, c, at a given indention load, P, the frequently observed relation between P and c3/2 is maintained for all of the indenters over a wide range of load. Features in the nanoindentation load-displacement curves in conjunction with Raman spectroscopy of the crystalline and amorphous phases in and around the contact impression show that the indenter geometry also plays a role in the phase transformation behavior. Results are discussed in relation to prevailing ideas about indentation cracking and phase transformation in silicon.


1990 ◽  
Vol 74 (10) ◽  
pp. 1107-1112 ◽  
Author(s):  
M. Boekholt ◽  
A. Erle ◽  
P.C. Splittgerber-Hünnekes ◽  
G. Güntherodt

2019 ◽  
Vol 12 (1) ◽  
pp. 19
Author(s):  
Bilal Abu Sal

This work is devoted to generalize and analyze the previouse results of new photonic-crystalline nanomaterials based on synthetic opals and active dielectrics. Data were characterized by X-ray diffraction and Raman spectroscopy. Active dielectrics infiltrated into the pores of the opal from the melt. The phase structure composition of the infiltrated materials into the pores of the opal matrix were analyzed. The results of x-ray diffraction and Raman spectra allowed to establish the crystal state of active dielectrics in the pores of the opal. The Raman spectra of some opal-active dielectric nanocomposites revealed new bands and changes in band intensities compared to the spectra of single crystals of active dielectrics. Further more, differences in band intensities in the spectra were measured at different spots of the sample‘s surface were observed. The revealed changes were attributed to the formation of new crystalline phases due to the injected dielectrics in opal pores.


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