Bias assisted growth on diamond single crystals: the defect formation due to ion bombardment studied by ion channelling, electron backscatter diffraction, and micro-Raman spectroscopy

2002 ◽  
Vol 11 (3-6) ◽  
pp. 487-492 ◽  
Author(s):  
M. Schreck ◽  
C. Grunick ◽  
C. Haug ◽  
R. Brenn ◽  
B. Stritzker
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
Defect Formation ◽  
Electron Backscatter Diffraction ◽  
Ion Bombardment ◽  
Micro Raman Spectroscopy ◽  
Electron Backscatter ◽  
Diamond Single Crystals ◽  
Backscatter Diffraction

scholarly journals Twinning Behaviour of Textured Polycrystalline Ni-Mn-Ga Alloy after Hot Extrusion

2009 ◽  
Vol 635 ◽  
pp. 195-199 ◽  
Author(s):  
Robert Chulist ◽  
Andrea Böhm ◽  
Thomas Lippmann ◽  
Werner Skrotzki ◽  
Welf Guntram Drossel ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Single Crystals ◽  
Electron Backscatter Diffraction ◽  
Extrusion Direction ◽  
Hot Extrusion ◽  
High Energy ◽  
Fibre Texture ◽  
Electron Backscatter ◽  
Backscatter Diffraction ◽  
Martensitic Variants

Up to now most of the research on Ni-Mn-Ga alloys was concentrated on single crystals. However, there is a great interest in polycrystals for technical applications. Recently, polycrystalline Ni50Mn29Ga21 rods of 25 mm diameter and 400 mm length were prepared by hot extrusion. The <100> <110> double fibre texture of the extruded rods was measured with high-energy synchrotron radiation. The microstructure after hot extrusion was analyzed with electron backscatter diffraction. Within the recrystallized grains all three martensitic variants have developed during cooling. Variants with twin boundaries preferentially aligned along the extrusion direction predominate.

Two-dimensional strain-mapping by electron backscatter diffraction and confocal Raman spectroscopy

2017 ◽  
Vol 122 (20) ◽  
pp. 205101 ◽  
Author(s):  
Andrew J. Gayle ◽  
Lawrence H. Friedman ◽  
Ryan Beams ◽  
Brian G. Bush ◽  
Yvonne B. Gerbig ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electron Backscatter Diffraction ◽  
Two Dimensional ◽  
Confocal Raman Spectroscopy ◽  
Strain Mapping ◽  
Electron Backscatter ◽  
Confocal Raman ◽  
Backscatter Diffraction

Electron backscatter diffraction analysis of Pb(Mg1/3Nb2/3)O3–35mol%PbTiO3 single crystals grown by seeded polycrystal conversion

2001 ◽  
Vol 16 (3) ◽  
pp. 694-700 ◽  
Author(s):  
Ajmal Khan ◽  
Derrick T. Carpenter ◽  
Adam M. Scotch ◽  
Helen M. Chan ◽  
Martin P. Harmer
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Electron Backscatter Diffraction ◽  
Second Phase ◽  
Crystal Imperfections ◽  
Simple Boundary ◽  
Electron Backscatter ◽  
Backscatter Diffraction ◽  
Crystal Seed ◽  
Grown Single Crystal

Electron backscatter diffraction (EBSD) has been applied to characterize Pb(Mg1/3Nb2/3)O3–35 mol%PbTiO3 single crystals grown by the seeded polycrystal conversion method. Macroscopically triangular crystal growth fronts were shown to each be associated with discrete crystals that originated from slightly misoriented segments of an initially cracked single-crystal seed plate. Various types of crystal imperfections, including voids, second-phase regions, and polycrystalline matrix grains trapped within the grown region, were readily identified and distinguished from one another using EBSD. Further, it was shown that trapped matrix grains in the grown region had consistently small misorientations with respect to the grown single crystal and this may be qualitatively explained by a simple boundary energetics argument. The significance of the trapped grains is discussed.

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

Cross Section Analysis of Cu Filled TSVs Based on High Throughput Plasma-FIB Milling

2012 ◽  
Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  
Keyword(s):  
High Resolution ◽  
Cross Section ◽  
High Throughput ◽  
Cross Sections ◽  
Electron Backscatter Diffraction ◽  
Grain Structure ◽  
Electron Backscatter ◽  
Section Surface ◽  
Backscatter Diffraction ◽  
Section Analysis

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.

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