Generation of Terahertz Radiation by Low-Temperature Multilayer Epitaxial Films of i-LT-GaAs/n-GaAs on GaAs Substrates with (100) and (111)A Orientations

2017 ◽  
Vol 19 (2) ◽  
pp. 77-84
Author(s):  
A.M. Buryakov ◽  
◽  
V.R. Bilyk ◽  
E.D. Mishina ◽  
G.B. Galiev ◽  
...  
2017 ◽  
Vol 51 (3) ◽  
pp. 310-317 ◽  
Author(s):  
G. B. Galiev ◽  
M. M. Grekhov ◽  
G. Kh. Kitaeva ◽  
E. A. Klimov ◽  
A. N. Klochkov ◽  
...  

2017 ◽  
Vol 51 (4) ◽  
pp. 503-508 ◽  
Author(s):  
G. B. Galiev ◽  
S. S. Pushkarev ◽  
A. M. Buriakov ◽  
V. R. Bilyk ◽  
E. D. Mishina ◽  
...  

1991 ◽  
Vol 241 ◽  
Author(s):  
L.-W. Yin ◽  
J. Ibbetson ◽  
M. M. Hashemi ◽  
W. Jiang ◽  
S.-Y. Hu ◽  
...  

ABSTRACTDC characteristics of a GaAs MISFET structure using low-temperature GaAs (LTGaAs) as the gate insulator were investigated. MISFETs with different gate to channel separation (d) were fabricated. The dependence of four important device parameters such as gate-drain breakdown voltage (VBR), channel current at zero gate bias (Idss), transconductance (gm), and gate-drain turn-on voltage (Von) on the gate insulator thickness were analyzed. It was observed that (a) in terms of Idss and gin, the LT-GaAs gate insulator behaves like an undoped regular GaAs layer and (b) in terms of VBR and Von, the LT-GaAs gate insulator behaves as a trap dominated layer.


1995 ◽  
Vol 24 (7) ◽  
pp. 913-916 ◽  
Author(s):  
K. -M. Lipka ◽  
B. Splingart ◽  
D. Theron ◽  
J. K. Luo ◽  
G. Salmer ◽  
...  

1995 ◽  
Vol 66 (21) ◽  
pp. 2867-2869 ◽  
Author(s):  
Akihiro Miyauchi ◽  
Kazuhiro Ueda ◽  
Yousuke Inoue ◽  
Takaya Suzuki ◽  
Yoshinori Imai

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).


1998 ◽  
Vol 533 ◽  
Author(s):  
A. Morrya ◽  
M. Sakuraba ◽  
T. Matsuura ◽  
J. Murota ◽  
I. Kawashima ◽  
...  

AbstractIn-situ heavy doping of B into Si1-xGex epitaxial films on the Si(100) substrate have been investigated at 550°C in a SiH4(6.0Pa)-GeH4(0.1−6.0Pa)-B2H6(1.25 ×10−5−3.75 × 10−2Pa)-H2(17–24Pa) gas mixture by using an ultraclean hot-wall low-pressure CVD system. The deposition rate increased with increasing GeH4 partial pressure, and it decreased with increasing B2H6 partial pressure only at the higher GeH4 partial pressure. As the B2H6 partial pressure increased, the Ge fraction scarcely changed although the lattice constant of the film decreased. These characteristics can be explained by the suppression of both the SiH4 and GeH4 adsorption/reactions in a similar degree due to B2H6 adsorption on the Si-Ge and/or Ge-Ge bond sites. The B concentration in the film increased proportionally up to 1022cm3 with increasing B2H6 partial pressure.


2017 ◽  
Vol 34 (1) ◽  
pp. 018101
Author(s):  
Hai-Long Yu ◽  
Hao-Yue Wu ◽  
Hai-Jun Zhu ◽  
Guo-Feng Song ◽  
Yun Xu

Laser Physics ◽  
2021 ◽  
Vol 31 (3) ◽  
pp. 036203
Author(s):  
Rui Jiang ◽  
Shuang Cheng ◽  
Quanyong Li ◽  
Qishu Wang ◽  
Yinjie Xin

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