Generation of Terahertz Radiation by Low-Temperature Multilayer Epitaxial Films of i-LT-GaAs/n-GaAs on GaAs Substrates with (100) and (111)A Orientations

ABSTRACTDC characteristics of a GaAs MISFET structure using low-temperature GaAs (LTGaAs) as the gate insulator were investigated. MISFETs with different gate to channel separation (d) were fabricated. The dependence of four important device parameters such as gate-drain breakdown voltage (VBR), channel current at zero gate bias (Idss), transconductance (gm), and gate-drain turn-on voltage (Von) on the gate insulator thickness were analyzed. It was observed that (a) in terms of Idss and gin, the LT-GaAs gate insulator behaves like an undoped regular GaAs layer and (b) in terms of VBR and Von, the LT-GaAs gate insulator behaves as a trap dominated layer.

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LT-GaAs with high breakdown strength at low temperature for power MISFET applications

Journal of Electronic Materials ◽

10.1007/bf02653341 ◽

1995 ◽

Vol 24 (7) ◽

pp. 913-916 ◽

Cited By ~ 8

Author(s):

K. -M. Lipka ◽

B. Splingart ◽

D. Theron ◽

J. K. Luo ◽

G. Salmer ◽

...

Keyword(s):

Low Temperature ◽

Breakdown Strength ◽

Lt Gaas

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Incorporation of oxygen and chlorine atoms into low‐temperature (850 °C) silicon epitaxial films by chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.113456 ◽

1995 ◽

Vol 66 (21) ◽

pp. 2867-2869 ◽

Cited By ~ 4

Author(s):

Akihiro Miyauchi ◽

Kazuhiro Ueda ◽

Yousuke Inoue ◽

Takaya Suzuki ◽

Yoshinori Imai

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Films ◽

Chlorine Atoms

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Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

MRS Proceedings ◽

10.1557/proc-241-239 ◽

1991 ◽

Vol 241 ◽

Author(s):

Y. Hwang ◽

D. Zhang ◽

T. Zhang ◽

M. Mytych ◽

R. M. Kolbas

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Wells ◽

Barrier Layer ◽

Molecular Beam ◽

Optical Quality ◽

First Order ◽

Gaas Buffer Layer ◽

Low Temperature Gaas ◽

Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

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Structural and optical properties of InSb epitaxial films grown on GaAs(100) substrates at low temperature

Applied Physics Letters ◽

10.1063/1.123077 ◽

1999 ◽

Vol 74 (3) ◽

pp. 380-382 ◽

Cited By ~ 6

Author(s):

T. W. Kim ◽

H. C. Bae ◽

H. L. Park

Keyword(s):

Optical Properties ◽

Low Temperature ◽

Epitaxial Films ◽

Structural And Optical Properties

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Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si1-xGex, Films Using Ultraclean LPCVD

MRS Proceedings ◽

10.1557/proc-533-349 ◽

1998 ◽

Vol 533 ◽

Cited By ~ 4

Author(s):

A. Morrya ◽

M. Sakuraba ◽

T. Matsuura ◽

J. Murota ◽

I. Kawashima ◽

...

Keyword(s):

Low Temperature ◽

Partial Pressure ◽

Epitaxial Growth ◽

Lattice Constant ◽

Deposition Rate ◽

Epitaxial Films ◽

Similar Degree ◽

Gas Mixture ◽

Heavy Doping

AbstractIn-situ heavy doping of B into Si1-xGex epitaxial films on the Si(100) substrate have been investigated at 550°C in a SiH4(6.0Pa)-GeH4(0.1−6.0Pa)-B2H6(1.25 ×10−5−3.75 × 10−2Pa)-H2(17–24Pa) gas mixture by using an ultraclean hot-wall low-pressure CVD system. The deposition rate increased with increasing GeH4 partial pressure, and it decreased with increasing B2H6 partial pressure only at the higher GeH4 partial pressure. As the B2H6 partial pressure increased, the Ge fraction scarcely changed although the lattice constant of the film decreased. These characteristics can be explained by the suppression of both the SiH4 and GeH4 adsorption/reactions in a similar degree due to B2H6 adsorption on the Si-Ge and/or Ge-Ge bond sites. The B concentration in the film increased proportionally up to 1022cm3 with increasing B2H6 partial pressure.

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