Anisotropy of impurity scattering and electrical conductivity in quasi-two-dimensional electronic systems

2008 ◽  
Vol 50 (4) ◽  
pp. 780-784 ◽  
Author(s):  
B. M. Askerov ◽  
G. I. Guseĭnov ◽  
V. R. Figarov ◽  
S. R. Figarova
2015 ◽  
Vol 185 (4) ◽  
pp. 337-352
Author(s):  
Veronika E. Bisti ◽  
Aleksandr B. Van'kov ◽  
Andrei S. Zhuravlev ◽  
Leonid V. Kulik

2021 ◽  
Author(s):  
Tao Li ◽  
Xuefeng Chang ◽  
Lifang Mei ◽  
Xiayun Shu ◽  
Jidong Ma ◽  
...  

Ti3C2Tx is a promising new two-dimensional layered material for supercapacitors with good electrical conductivity and chemical stability. However, Ti3C2Tx has problems such as collapse of the layered structure and low...


2019 ◽  
Vol 1163 ◽  
pp. 012006
Author(s):  
Yuri Yu Tarasevich ◽  
Andrei V Eserkepov ◽  
Irina V Vodolazskaya ◽  
Petr G Selin ◽  
Valentina V Chirkova ◽  
...  

1976 ◽  
Vol 54 (14) ◽  
pp. 1454-1460 ◽  
Author(s):  
T. Tiedje ◽  
R. R. Haering

The theory of ultrasonic attenuation in metals is extended so that it applies to quasi one and two dimensional electronic systems. It is shown that the attenuation in such systems differs significantly from the well-known results for three dimensional systems. The difference is particularly marked for one dimensional systems, for which the attenuation is shown to be strongly temperature dependent.


2021 ◽  
Author(s):  
Qizhi Xu ◽  
Boyuan Zhang ◽  
Yihang Zeng ◽  
Amirali Zangiabadi ◽  
Hongwei Ni ◽  
...  

Ultrathin porous films held together by non-covalent van der Waals interactions was obtained by a top-down approach, which is then utilized as channel material in a two-dimensional planar field-effect transistor device through easy stamp transfer.


1989 ◽  
Vol 67 (4) ◽  
pp. 212-217 ◽  
Author(s):  
W. Allegretto ◽  
A. Nathan ◽  
K. Chau ◽  
H. P. Baltes

We present results of electrothermal interactions in fine geometry contacts and vias. The results have been obtained using a two-dimensional model based on the finite-box procedure. For the contact geometry, large electric potential gradients and consequently high Joule-heating effects develop at the interface, which is relatively low in electrical conductivity. In the case of the via, however, temperature escalations result from singularities in the electric field at geometrically imperfect locations, owing to inadequate step coverage in the metallization process. In particular, we discuss the treatment of boundary conditions for the temperature equation.


Nano Letters ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 6030-6036 ◽  
Author(s):  
Shuai Zhang ◽  
Lei Gao ◽  
Aisheng Song ◽  
Xiaohu Zheng ◽  
Quanzhou Yao ◽  
...  

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