Low-temperature electrical conductivity and the superconductor-insulator transition induced by indium impurity states in (Pb0.5Sn0.5)1 − x In x Te solid solutions

The temperature range of [Formula: see text] = 77–770 K in the system alloys: Holl coefficient [Formula: see text], thermo-emf [Formula: see text], electric conductivity [Formula: see text], measured [Formula: see text]-density of components and analyzed. It has been established that samarium additive atoms contain donor-type properties and the effectiveness increases with the temperature increase: up to 40% proportional to [Formula: see text] K in [Formula: see text]-type specimens, whereas in [Formula: see text]-type samples this increase is higher and covers the contents of pH varying from [Formula: see text] to [Formula: see text]. An electrical conductivity of compounds increased due to the carrier activation with further increase of temperature. The activation energy of carriers at low temperatures ([Formula: see text] K) is [Formula: see text] eV for [Formula: see text] mol.% and [Formula: see text] mol.% compounds at [Formula: see text] = 77–320 K and for [Formula: see text] mol.% and [Formula: see text] mol.% compounds are [Formula: see text] eV. [Formula: see text] const at [Formula: see text]–400 K for [Formula: see text] mol.% and [Formula: see text] mol.% compounds, and passing with minimum increases at [Formula: see text] = 400–500 K.

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Pair tunneling in the low-temperature conductivity of the Cd-Sb alloy high-resistance state near the superconductor-insulator transition

JETP Letters ◽

10.1134/1.567295 ◽

1996 ◽

Vol 64 (10) ◽

pp. 767-773 ◽

Cited By ~ 3

Author(s):

V. F. Gantmakher ◽

V. N. Zverev ◽

V. T. Dolgopolov ◽

A. A. Shashkin

Keyword(s):

Low Temperature ◽

High Resistance ◽

High Resistance State ◽

Insulator Transition ◽

Temperature Conductivity ◽

Pair Tunneling ◽

Resistance State ◽

Superconductor Insulator Transition

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Electronic transport at low temperature below the field-driven superconductor–insulator transition in thin a-MoxSi1−x films

Physica C Superconductivity ◽

10.1016/j.physc.2005.02.029 ◽

2005 ◽

Vol 426-431 ◽

pp. 153-157

Author(s):

M. Morita ◽

S. Okuma

Keyword(s):

Low Temperature ◽

Electronic Transport ◽

Insulator Transition ◽

Superconductor Insulator Transition

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Low-temperature electrical conductivity of Ta-compensated sodium bronze near the metal-insulator transition

Physical Review B ◽

10.1103/physrevb.44.8572 ◽

1991 ◽

Vol 44 (16) ◽

pp. 8572-8577 ◽

Cited By ~ 29

Author(s):

A. K. Raychaudhuri

Keyword(s):

Electrical Conductivity ◽

Low Temperature ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator

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Behaviour of the conductivity in metallic 70 Ge:Ga close to the metal-insulator transition

E3S Web of Conferences ◽

10.1051/e3sconf/202122901056 ◽

2021 ◽

Vol 229 ◽

pp. 01056

Author(s):

Mohamed Errai ◽

Said Amrane

Keyword(s):

Magnetic Field ◽

Electrical Conductivity ◽

Low Temperature ◽

Electrical Transport ◽

Weak Localization ◽

Insulator Transition ◽

Electrical Transport Properties ◽

Metal Insulator Transition ◽

Metallic Behavior ◽

Metal Insulator

The electrical transport properties in sample 1 of impurity concentration n=xx of the 70Ge: Ga system are studied in the absence of a magnetic field and at low temperature in the range 0.53 to 0.017 K. It is noted that the electrical conductivity of sample 1 exhibits a metallic behavior. We found that the exponent S is equal to 0.5 (σ=σ(T=0)+mTs). This result is in agreement with the theory of weak localization (WL) at 3D and the theory of electronelectron interactions (EEI). We also found that sample 1 is located near the metal-insulator transition (MIT) of the metallic side.

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