An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method

2016 ◽  
Vol 42 (11) ◽  
pp. 1107-1109
Author(s):  
O. S. Talarico ◽  
V. V. Tregulov ◽  
V. G. Litvinov ◽  
A. V. Ermachikhin
Keyword(s):  
Current Flow ◽  
Vapor Transport ◽  
Flow Mechanisms ◽  
Transport Method ◽  
Vapor Transport Method

Facile synthesis of rhenium disulfide flakes by vacuum vapor transport method

2019 ◽  
Vol 111 ◽  
pp. 191-194 ◽  
Author(s):  
Sihong Zhang ◽  
Jianyu Wang ◽  
Peng Chen ◽  
Yan Lu ◽  
Weiwei Hou ◽  
...  
Keyword(s):  
Vapor Transport ◽  
Facile Synthesis ◽  
Transport Method ◽  
Vapor Transport Method

Growth of SiOx Nanowires by Simple Vapor Transport Method and their Optical Properties

2013 ◽  
Vol 534 ◽  
pp. 141-145 ◽  
Author(s):  
Yuto Hakamada ◽  
Shunji Ozaki
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Silicon Monoxide ◽  
Vapor Transport ◽  
X Ray ◽  
Si Substrates ◽  
Vls Growth ◽  
Transport Method ◽  
Vapor Transport Method ◽  
Scanning Electron

SiOx nanowires were grown on Si substrates by a simple vapor transport method of heating the mixture of silicon monoxide and carbon powders at 1000 °C in a tube of the furnace. The dependence of the growth velocity on the growth temperature and on the radius of nanowires indicates that the SiOx nanowires grow through the vaporliquidsolid (VLS) growth mechanism. The properties of the nanowires are characterized using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL).

Seed Polarity Dependence of SiC SingleCrystal Growth by Using a Physical Vapor Transport Method

2009 ◽  
Vol 54 (5(1)) ◽  
pp. 1834-1839 ◽  
Author(s):  
Jung-Gon Kim ◽  
Chang-Hyun Son ◽  
Jung-Woo Choi ◽  
Jung-Kyu Kim ◽  
Won-Jae Lee ◽  
...  
Keyword(s):  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method

Growth of Ga2O3 Nanowires by a Vapor Transport Method and their Optical Transmittance Spectra

2020 ◽  
Vol 38 ◽  
pp. 3-9
Author(s):  
Shunji Ozaki ◽  
Yuki Nakahata
Keyword(s):  
Optical Transmittance ◽  
Vapor Transport ◽  
Bandgap Energy ◽  
Transmittance Spectra ◽  
Si Substrates ◽  
Gallium Metal ◽  
Fused Quartz ◽  
Colored Product ◽  
Transport Method ◽  
Vapor Transport Method

Gallium oxide (Ga2O3) nanowires were grown on fused quartz and Si substrates by a vapor transport method of heating gallium metal at 750−1100 °C in a tube of the horizontal furnace. The obtained white colored product has shown to be the Ga2O3 nanowires with average diameters ranging from 30 to 80 nm. The optical transmittance spectra indicated that the bandgap energy of Ga2O3 nanowire increases as the diameter of nanowire decreases.

Centimeter size BiSeI crystal grown by physical vapor transport method

2019 ◽  
Vol 517 ◽  
pp. 7-11 ◽  
Author(s):  
Bao Xiao ◽  
Mengqin Zhu ◽  
Leilei Ji ◽  
Bin-Bin Zhang ◽  
Jiangpeng Dong ◽  
...  
Keyword(s):  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method
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